defect in Silicon-Carbide

Large-scale quantum networks based on solid-state defects require both good spin and optical coherence times while simultaneously satisfying a high emission into the desired optical mode to generate entanglement^[1,2]. Recently the V_Si defect in silicon-carbide has gained significant interest because of both theoretical and experimental advancements that demonstrate promising results in this context, even when integrated into nano-photonic surfaces^[3,4]. Besides, silicon-carbide benefits from a large industrial backbone in terms of e.g., its wafer scale availability and research on surface termination, which makes it a promising material for future scalability.

Here we present our recent progress to use V_Si defects in SiC for future quantum networks. We discuss our work on nanophotonic structures to improve the collection efficiency and boost the emission of light into the desired optical mode for remote entanglement generation. In addition, we present our progress in understanding and utilizing multi-qubit registers based on spins in SiC for quantum networks and sensing applications.

[1] Pompili et al. Science 372, 6539, 359-264 (2021).

[2] Hermans et al. Nature 604, 663-668 (2022).

[3] Babin et al. Nature Materials 21, 67-73 (2022).

[4] Lukin et al. Nature Photonics 14, 330-334 (2020).