Bulletin of the American Physical Society
APS March Meeting 2023
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session K32: Frontiers in Growth |
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Sponsoring Units: DCMP Chair: Adele Poynor, Allegheny College Room: Room 224 |
Tuesday, March 7, 2023 3:00PM - 3:12PM |
K32.00001: Atomic-scale nanowire arrays grown by Turing instability Tomoya Asaba, Lang Peng, Takahiro Ono, Satoru Akutagawa, Ibuki Tanaka, Hinako Murayama, Shota Suetsugu, Yuichi Kasahara, Takahito Terashima, Yuhki Kohsaka, Takasada Shibauchi, Masatoshi Ichikawa, Shin-ichi Sasa, Yuji Matsuda Continued advances in quantum technologies rely on producing nanometer-scale wires. Although several state-of-the-art nanolithographic technologies and bottom-up synthesis processes have been used to engineer such wires, critical challenges remain in growing uniform atomic-scale crystalline wires and constructing their network structures. We discover a novel crystal growth mechanism that is based on a self-organization phenomenon. This mechanism enables fabricating atomic-scale wires with various arrangements, including X-, Y-junctions, and nanorings. Single-crystalline atomic-scale wires of semiconducting β-RuCl3 are grown on graphite substrate by pulsed-laser deposition. These wires are one-unit-cell-thick and have an exact width of two- and four-unit-cells (1.4 and 2.8,nm) and lengths up to a few $mu$m. Furthermore, we find typical hallmarks of the non-equilibrium reaction-diffusion processes in the wire patterns, implying that the uniformly aligned wires are possibly formed by Turing instability, a concept that describes how patterns in nature can arise autonomously. Our findings offer a new perspective on the non-equilibrium self-organization phenomena on an atomic scale, which paves a unique way for the quantum architecture of nano-network. |
Tuesday, March 7, 2023 3:12PM - 3:24PM |
K32.00002: Optimization of nucleation and growth parameters for large-scale MoS2 thin films using chemical vapor deposition: A case study Vivek Chaudhary, Mohammed El Hammoumi, Afaf Yaden, Ghassane Tiouitchi, Nour Alem, Petr Neugebauer, Abdelouahed El Fatimy The semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) have demonstrated promising applications in electronics, optoelectronics, photonics, etc. Molybdenum disulfide (MoS2) is one of the most explored 2D-TMDs due to its intriguing features and potential for emergent electronics. Apart from that, the valley-related physics in monolayer MoS2 made it a hot topic of current research. However, the synthesis of defect-free large-scale monolayer MoS2 with minimal cost is still challenging. Herein, the nucleation and growth of monolayer MoS2 on two different substrates (SiO2/Si, mica) via low-pressure chemical vapor deposition is reported. The distance between the precursors (MoO3/S) and the substrate is also studied for optimal growth. Further, the substrate surface treatment with different agents, like ammonia and other alkali salts, has shown promising results for scaling up monolayer MoS2 films. |
Tuesday, March 7, 2023 3:24PM - 3:36PM |
K32.00003: Preliminary results from first large-area ion beam deposition system in the UK Mariana A Fazio, Kieran Craig, Marwa Ben Yaala, Bethany McCrindle, Chalisa Gier, Callum Wiseman, Kai Starke, Peter MacKay, Caspar Clark, Des Gibson, Iain Martin, Sheila Rowan, Stuart Reid Ion beam deposition (IBD) is one of the leading techniques to produce high-quality optical coatings. This process has been shown to provide materials with low optical absorption and low mechanical loss suitable for use in ultrastable optical cavities such as gravitational-wave detectors and optical clocks. Recently, the Extreme Performance Optical Coatings testbed (hosted within the National Manufacturing Institute Scotland – NMIS) established by the Universities of Strathclyde, Glasgow, and West of Scotland and two industrial partners (Gooch and Housego Ltd and Helia Photonics Ltc) has incorporated a unique IBD system capable of coating up to two 620 mm diameter optics with strict uniformity requirements. In this work, we present preliminary results from the initial tests of deposition of thin films showing the optical characteristics of the materials and the high uniformity achieved by this system. This capability will enable the support for research and technological advances for large-area high-quality IBD coatings relevant to third generation gravitational-wave detectors, quantum technologies, space applications, intense light-matter interaction experiments, and beyond. |
Tuesday, March 7, 2023 3:36PM - 3:48PM |
K32.00004: In situ x-ray characterization of silicon carbide heteropolytypic growth during chemical vapor deposition Katherine Harmon, Nazar Delegan, Mauricio Angelone, Haiying He, Peter Zapol, F. Joseph Heremans, Stephan O Hruszkewycz, Matthew J Highland Silicon carbide (SiC) exhibits exceptional versatility for applications in quantum information science (QIS) owing to its numerous optically active point defect complexes with emissions ranging from the visible to infrared regimes. Its reported occurrence in over 200 polytypes and the close formation energies of the most common polytypes present both an unparalleled opportunity for additional tunability of point defects and a challenge for their control. We present the first results from a hard x-ray compatible in situ SiC chemical vapor deposition (CVD) system which show the growth of mixed polytype SiC materials in real time. X-ray surface diffraction measurements provide a sensitive probe of structural changes as a function of synthesis conditions. We discuss how our proof-of-principle measurements will enable a detailed understanding of formation of polytypic inclusions, which can then be controlled in order to optimize point defect emission properties for desired QIS applications. |
Tuesday, March 7, 2023 3:48PM - 4:00PM |
K32.00005: Structural and Electrical Properties of 2-D Transition Metal Oxides Jessica Fink, Jacob Berry, Gabriel Fedynich, Kartik Ghosh 2-dimensional materials have gained much popularity after the rise of graphene with its unique physical properties such as high electrical conductivity, high thermal conductivity, and high elasticity. There is an active search for 2D materials beyond graphene to improve performance in energy applications, sensors, and optoelectronic devices. Recently, transition metal dichalcogenides such as molybdenum disulfide (MoS2) are on the rise. However, MoS2 is well researched whereas molybdenum oxide (MoOx) has been studied less. Molybdenum oxide can be in various forms such as MoO, MoO2, and MoO3. MoO2 and MoO3 are the most stable, these films can be tuned for various properties. The focus of this study is to synthesize an ultra-thin film or 2D structure of MoO3 thin films on various substrates. The synthesis method is pulse laser deposition which allows fine-tune growth parameters to produce a thin film of MoO3. Through varying growth parameters including the deposition environment, energy density, and growth temperature. Characterizations include Raman Spectroscopy, X-ray Diffraction, electrical measurements, Scanning Electron Microscopy, Photoluminescence and more. This work aims to provide material solutions for applications in various industries.
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Tuesday, March 7, 2023 4:00PM - 4:12PM |
K32.00006: Opportunities through high temperature treatments on transferred oxide membranes Varun Harbola, Yu-Jung Wu, Hongguang Wang, Sander Smink, Sarah C Parks, Peter A van Aken, Jochen D Mannhart New developments in the last half decade in epitaxial thin film growth have made it possible to separate the thin film from the substrate. In this membrane form, the single crystalline oxide can be transferred to any new platform or substrate of interest. This can be used to place it on substrates where it is difficult to grow them conventionally. Here we report our work on the transfer of complex oxide membranes on a pristine sapphire substrate, subjected to subsequent processing at temperatures >1000oC. We observe that the membranes are inherently unstable at these high temperatures, owing to the large surface energy, and can agglomerate easily, as the membrane is not chemically bonded to the substrate. We show that the membrane self assembles into crystalline nanostructures upon thermal processing and at different temperatures goes through different stages of nanostructure evolution, which are consistent across a variety of thicknesses. We also show the quality of our nanostructures through transmission electron microscopy, which reveals a clean sharp interface between the transferred membrane and the sapphire substrate. With these results we can conclude that high temperature processing of oxide membranes on suitable substrates presents an opportunity for high quality oxide nanostructuring. |
Tuesday, March 7, 2023 4:12PM - 4:24PM |
K32.00007: Isotropic Atomic Layer Etching of TiN by Oxidation to TiO2 and Selective Etching of TiO2 by SF6 and H2 Plasma Azmain A Hossain, Haozhe Wang, David Catherall, Austin J Minnich, Russ Renzas, Harm Knoops We report isotropic plasma atomic layer etching (ALE) of titanium nitride (TiN) using sequential and self-limiting oxidation and etching steps. TiN is oxidized to TiO2 via exposure to O2 gas which is subsequently spontaneously etched by exposure to a H2 and SF6 plasma. The process exploits the selectivity of spontaneous etching of TiO2 over TiN with the plasma. A 4:1 ratio of H2:SF6 is shown to be highly selective, etching TiO2 but exhibiting negligible etching of TiN over 50 cycles. TiN ALE was observed at temperatures between 200°C and 300°C, with a maximum etch rate of 0.8Å/cycle observed at 300°C, measured using ex-situ ellipsometry. After ALE, the etched surface was characterized using X-ray photoelectron spectroscopy and atomic force microscopy. These findings have relevance for applications of TiN in microwave kinetic inductance detectors and superconducting qubits. |
Tuesday, March 7, 2023 4:24PM - 4:36PM |
K32.00008: Low temperature growth of BaZrS3 thin film by magnetron sputtering Haolei Hui, Zhonghai Yu, Chang Huai, Thomas Hahn, Sen Yang, Hao Zeng Chalcogenide perovskite is an emerging class of semiconductor materials with potential applications in electronics and optoelectronics. BaZrS3 is one of the most studied chalcogenide perovskites due to its high absorption coefficient, a visible bandgap below 2 eV, high stability, and relatively mild synthesis conditions. In this work we report the synthesis of BaZrS3 thin films using magnetron sputtering of Ba and Zr metal targets, followed by CS2 sulfurization at relatively low temperatures. NaF was used improve the film crystallinity. Sample growth on conductive substrates was also attempted, with an eye for device fabrications. Photo-detector devices were fabricated using low temperature grown BaZrS3. Our work demonstrates a new way of fabricating BaZrS3 thin films and devices at moderate conditions. |
Tuesday, March 7, 2023 4:36PM - 4:48PM |
K32.00009: Liberating Wafer-scale Topological Insulator Ultrathin Films Chi Ian Ip, Chenhui Yan, Khanh Duy Nguyen, Haoran Lin, Hossein Rokni, Shuolong Yang Heterostructural thin films have become a promising platform to explore and manipulate the emergent phenomena of quantum materials. One of the biggest challenges in fabricating these heterostructures lies in creating wafer-scale thin films and transferring them onto another thin film or targeted substrate. Although the traditional mechanical exfoliation method that involves tapes and Polydimethylsiloxane (PDMS) works well on many chemical vapor deposition (CVD) grown 2D materials such as MoS2 and WS2, it is extremely challenging to exfoliate wafer-sized few-layer thin films grown using molecular beam epitaxy (MBE) with this method. While MBE films are known for their pristine sample quality, single-crystalline structure, and precise doping control, the film quality is highly dependent on the substrate, which imposes an additional constraint. Here, we propose a technique that allows us to liberate and transfer wafer-sized topological insulator thin films grown on oxide substrates using MBE down to 3nm to any targeted materials. We have shown using atomic force microscopy (AFM) and angular-resolved photoemission spectroscopy (ARPES) that this transfer technique allows the film to maintain its surface morphology and electronic properties. This technique allows us to benefit from MBE’s intricate control of electronic and structural properties while lifting the substrate constraint. This opens up many revenue opportunities such as the construction of superlattices, devices, twistronics, and the study of suspended films. |
Tuesday, March 7, 2023 4:48PM - 5:00PM |
K32.00010: Pulsed Laser Deposition of crystalline hydroxyapatite coatings for biomedical implant coatings Ali O Er, Salizhan Kylychbekov, Zikrulloh Khuzhakulov, Yaran Allamyradov, Inomjon Majidov, Chazz Kitchens Biomedical implants are getting abundant as the demand for implant surgeries is increasing. Stainless steel 316L, titanium alloys, and cobalt chromium are the most commonly used materials for biomedical implants. However, human bodies occasionally react to these materials as "foreign bodies" due to their insufficient bioactivity. Although coating them with hydroxyapatite (HAP), Ca10(PO4)6OH2, has been a mainstream approach for making bioinert metal surfaces biocompatible, obtaining both mechanically stable and bioactive HAP layers has been a challenge. Part of the problem lies in producing crystalline coatings as they have better degradation resistance in saline human body fluid. In this work, the production of crystalline HAP films prepared by pulsed laser deposition technique was investigated with an emphasis on degradation resistance in the human body, film-implant adhesion strength, and bioactivity properties. Our XRD results confirm that two methods can be used to obtain crystalline films: varying the substrate temperature from 25 to 800 or post-deposition annealing in an air environment. In addition, the effect of laser wavelengths: 1064, 532, and 355 nm on film microstructure and mechanical qualities were studied via SEM with EDX analysis, AFM, pull-out, and nanoindentation tests. Lastly, the bioactivity of films depending on growth environments and crystallinities will be presented through in vitro cell growth and dissolution studies, i.e., in simulated body fluid and human blood plasma. |
Tuesday, March 7, 2023 5:00PM - 5:12PM |
K32.00011: Understanding Silicon Nitride Crystallization from Amorphous Deposited Layers with Molecular Dynamics J Matthew D Lane, Scott J Grutzik, Khalid Hattar, Hojun Lim, Jennie Podlevsky, Christopher Bishop, Tesia Janicki Under fabrication conditions normally-stable silicon nitride amorphous layers can exhibit anomalous crystallization which nucleates and grows. These pest crystalline structures negatively impact microelectronics performance and reduce batch yields. In this work, we use molecular dynamics simulations to investigate silicon nitride crystallization nucleation and growth properties as a function of temperature, defects, and local stress. In addition, differences between several models are investigated and the results are compared to recent experiments. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-NA-0003525. |
Tuesday, March 7, 2023 5:12PM - 5:24PM |
K32.00012: High-quality synthesis of Sulfur-based TMDs via Molecular Beam Epitaxy Andrew Murphy, Hyunsue Kim, Lisa Frammolino, Fan Zhang, Li-Syuan Lu, Wen-Hao Chang, Chih-Kang Shih Sulfur is one of the most frequently used chalcogens when synthesizing transition metal dichalcogenide (TMD) films or bulks. Due to the high partial vapor pressure, however, elemental sulfur is known to be difficult to control under an ultra-high vacuum environment. With FeS2 solid-state source, we can gain control of sulfur flux and successfully grow S-based TMDs including MoS2 and WS2. Preliminary ex-situ characterizations with XPS, AFM, and Raman are done to ensure the quality of the film after each growth. Furthermore, by combining MBE growth with in-situ scanning tunneling microscopy/spectroscopy (STM/S) and Angle-Resolved Photoemission Spectroscopy (ARPES) we confirm the characteristic band structures of the WS2 and MoS2 films on different substrates and observed a significant reduction of intrinsic impurities compared to chemical vapor deposition (CVD) grown samples. MBE growth of sulfides introduces a high-quality, scalable platform with effective defect controls for device applications. |
Tuesday, March 7, 2023 5:24PM - 5:36PM |
K32.00013: In situ soft chemistry engineering of nickelate superconductors Yijun Yu, Yonghun Lee, Kyuho Lee, Martin Gonzalez, Bai Yang Wang, Woo Jin Kim, Jennifer Fowlie, Harold Hwang Superconducting infinite-layer nickelate thin films are obtained by topotactic reduction from the perovskite precursor phase [1]. In aim of improving the understanding and control of the oxygen deintercalation reaction, and improving the quality of superconducting nickelate thin films, we have developed an experimental platform that can monitor the topotactic reduction by transport measurements between 620 K and 2 K. Precise control of the chemical reaction provides a new way to tune the electronic properties of nickelate superconductors. The technique of in situ soft chemistry engineering also opens the possibility of exploring emergent quantum phases in other oxide thin films that can undergo topochemical reactions. |
Tuesday, March 7, 2023 5:36PM - 5:48PM |
K32.00014: Quantum dynamics in the solid state Rahul Nandkishore I will discuss what information may be extracted from ultrafast quantum dynamics in the solid state. Specifically, I consider the experimental protocol of multidimensional coherent spectroscopy, and how it may be used to extract otherwise inaccessible information about solid state systems. |
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