Bulletin of the American Physical Society
APS March Meeting 2023
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session F74: Quantum Computing with Donor Spins IIFocus
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Sponsoring Units: DQI Chair: Evangelia Takou, Virginia Tech Room: Room 403/404 |
Tuesday, March 7, 2023 8:00AM - 8:36AM |
F74.00001: Silicon T centre devices for quantum networks Invited Speaker: Daniel B Higginbottom The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spin qubits [1], and proven native integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips [2]. Here we present recent advances in integrated photonic T centre devices and determine previously unknown properties of the T centre to instruct their operation in both on-chip and distributed quantum networks. We demonstrate new levels of integration by characterizing T centres in single-mode waveguide devices in SOI including nanophotonic cavities. We find that the narrow homogeneous linewidth of these waveguide-integrated emitters is already sufficiently low to predict the future success of remote spin-entangling protocols with only modest cavity Purcell enhancements. Newly determined ground-state Hamiltonians illustrate how high-fidelity entanglement may be distributed over such a network, utilizing a local register of nuclear spin qubits at each T centre. These results cumulatively support the view that high-performance, large-scale distributed quantum technologies based upon T centres in silicon may be attainable in the near term [3]. |
Tuesday, March 7, 2023 8:36AM - 8:48AM |
F74.00002: Waveguide-integrated silicon T centres Adam DeAbreu, Camille Bowness, Amirhossein Alizadeh, Camille Chartrand, Nicholas A Brunelle, Evan R MacQuarrie, Nicholas R Lee-Hone, Myles Ruether, Moein Kazemi, Alex T Kurkjian, Sjoerd Roorda, Nikolai V Abrosimov, Hans-Joachim Pohl, Michael L Thewalt, Daniel B Higginbottom, Stephanie Simmons A key step towards quantum technologies is the deployment of a qubit within a modular platform, one that can achieve the large scales necessary for practical computation and communication. One path to this modular design is the use of optically linked quantum networks for distributed computing. The T centre provides many advantages for realizing such a technology. Possessing a photonic degree of freedom in the telecommunications band along with long-lived electron and nuclear spins all while being native to silicon – the proven leader for modular, scalable architectures in both electronics and photonics. Recent work has shown that T centres can be reliably integrated into commercially available silicon-on-insulator wafer and here we take the next step in integrating T centres into waveguide devices suitable for building up modular networks. We demonstrate optical control of the T centre spin ensembles and measure long spin lifetimes. Next we perform hole burning to reveal homogeneous linewidths more than an order of magnitude narrower than previous estimates and forecast that remote entanglement operations are within reach with only modest cavity Purcell enhancements. Finally, we investigate the performance ceiling of the T centre ensembles via hole burning on bulk isotopically purified silicon showcasing a homogeneous linewidth nearly at the lifetime limit. These measurements further solidify the T centre as a promising qubit candidate for deployment into modular platforms in the near future. |
Tuesday, March 7, 2023 8:48AM - 9:00AM |
F74.00003: High-throughput search for defect-based qubits in silicon Yihuang Xiong, Diana Dahliah, Céline Bourgois, Sinead M Griffin, Alp Sipahigil, Geoffroy Hautier Point defects in semiconductors have become central to searching and designing physical systems for use as qubits. The color centers in silicon have seen a resurgence of interest in quantum information science, such as Se+Si, the T center, and the G center [1,2,3,4]. Using first-principles methods, we performed a high-throughput search for point defects (substitutions and interstitials) in silicon that are thermodynamically stable, with accessible charge states, and optically active. Our results suggest promising candidates for qubit applications and shed light on designing strategies for innovative defect-based qubits. |
Tuesday, March 7, 2023 9:00AM - 9:12AM |
F74.00004: Spin control of a tin vacancy center in diamond Eric I Rosenthal, Hannah C Kleidermacher, Abigail Stein, Alison E Rugar, Daniel Riedel, Hope Lee, Jakub Grzesik, Shahriar Aghaeimeibodi, Kasper Van Gasse, Christopher P Anderson, Jelena Vuckovic The tin vacancy (SnV-) center in diamond is a promising building block for quantum networks due to its large ground state splitting, bright zero-phonon line, and inversion symmetric structure which reduces sensitivity to noise. However, large spin-orbit coupling complicates direct microwave control of the center’s electronic spin, a necessity for its use in quantum applications. Here, using an optical Raman drive we demonstrate coherent population trapping of the spin of a single SnV- center. We present progress toward high fidelity spin gates in photonic integrated devices. |
Tuesday, March 7, 2023 9:12AM - 9:24AM |
F74.00005: Probing spin-phonon interactions in silicon vacancy centers via surface acoustic waves Eliza Cornell, Sophie Weiyi Ding, Benjamin Pingault, Zhujing Xu, Marko Loncar Phonons in solid-state quantum systems hold intriguing advantages for encoding chip-scale itinerant qubits. Phononic devices are compact: gigahertz-range phonons have wavelengths of microns, which is 10^5 times smaller than the wavelength of a photon at the same frequency. Phonons can also couple to many systems, including superconducting qubits, optical photons, and solid-state defects. Of these, the negatively charged silicon-vacancy center (SiV) in diamond has a remarkably high strain susceptibility, and its spin levels can be coherently driven by resonant surface acoustic waves (SAW). Due to the coherent nature of this coupling we expect that when the SiV spin relaxes, it can emit a coherent phonon into the diamond lattice. Channeling these phonons into specific mechanical modes is necessary to create phononic quantum network architecture. We attempt to enhance the emission rate of phonons from an SiV into measurable mechanical modes by engineering the local phononic density of states around the SiV. Existing SAW technology allows us to electrically probe certain mechanical modes via the piezoelectric coupling between the motion of the modes and an interdigital transducer. We also discuss potential devices that could exploit the SiV spin as a source of single coherent phonons. |
Tuesday, March 7, 2023 9:24AM - 9:36AM |
F74.00006: Mechanical control of a single nuclear spin in diamond Benjamin Pingault, Smarak Maity, Graham Joe, Michelle Chalupnik, Daniel R Assumpcao, Eliza Cornell, Linbo Shao, Marko Loncar Nuclear spins interact weakly with their environment and therefore exhibit long coherence times. This has led to their use as memory qubits in quantum information platforms, where they are controlled via electromagnetic waves. Scaling up such platforms comes with challenges in terms of power efficiency, heating, as well as cross-talk between devices. Here, we demonstrate coherent control of a single nuclear spin using surface acoustic waves. We use a single silicon-vacancy center in diamond as an interface between a single $^{13}$C nuclear spin and a surface acoustic wave and demonstrate mechanically driven Ramsey and spin-echo sequences on the nuclear spin to show that it retains its excellent coherence properties. We estimate that this approach requires 2–3 orders of magnitude less power than more conventional control methods. Furthermore, this technique is scalable because of the possibility of guiding acoustic waves and reduced cross-talk between different acoustic channels. This work demonstrates the use of mechanical waves for complex quantum control sequences on single electronic and nuclear spins, offers an advantageous alternative to the standard electromagnetic control of nuclear spins, and opens prospects to interface silicon-vacancy center spins and nuclear spins with mechanical resonators towards the single phonon regime. |
Tuesday, March 7, 2023 9:36AM - 9:48AM |
F74.00007: Towards high-fidelity gates for spin qubits in diamond Jiwon Yun, Hans P Bartling, Luc Enthoven, Kai-Niklas Schymik, Margriet van Riggelen, Macoud Babaie, Fabio Sebastiano, Tim Hugo Taminiau Optically active spin qubits in solid-state materials are a promising platform for quantum networks and distributed quantum computation. Recent advances include entanglement over a three-node network and the fault-tolerant operation of a logical quantum bit of an error correction code. A key challenge for larger networks and computations is to further increase the single-qubit and two-qubit gate fidelities. In this work, we use two-qubit gate set tomography (GST) to characterize and optimize gate fidelities for spin qubits in diamond. By comparing the experimental results with numerical simulations, we discuss the current limitations of the gates. These results will help understand and subsequently improve quantum gates for quantum information processes and quantum networks based on the NV center in diamond, as well as other spin qubits in a variety of materials. |
Tuesday, March 7, 2023 9:48AM - 10:00AM |
F74.00008: Electronic structure, spin properties, and charge state stability of the negatively charged nickel vacancy center in diamond Ian Morris, Kai Klink, Logan Crooks, Leeju Singh, David Hardeman, Ofer Firstenberg, Shannon S Nicley, Eilon Poem, Jonas N Becker Crystal defects in diamond, specifically the nitrogen vacancy (NV) and group-IV vacancy (SiV, GeV, SnV) centers have emerged as leading qubit candidates and have been used in several proof-of-principle experiments. However, they face several orthogonal challenges, with the NV's lack of symmetry limiting its optical properties and the group-IV vacancies electronic structure resulting in short coherence times. Recently, we have identified the nickel vacancy (NiV) to be a highly promising inversion-symmetric and electronically favorable defect to overcome these remaining limitations. Here, we report first steps towards making the NiV accessible for applications in quantum information processing. We demonstrate creation of NiV- centers in both type IIa and IIb diamond via ion-implantation and high-temperature high-pressure annealing. Using confocal magneto-optical fluorescence spectroscopy at temperatures down to 1.7K and up to 9T, we further characterize the NiV's optical properties, transition linewidths, and fluorescence lifetimes. Our studies broadly confirm the predicted electronic and spin properties and are consistent with our own group theoretical model as well as with recent density functional theoretical calculations. Finally, we investigate the center's charge state stability and ground state spin properties under various illumination and diamond substrate conditions, paving the way for all-optical spin control. |
Tuesday, March 7, 2023 10:00AM - 10:12AM |
F74.00009: Discriminating nuclear spins in an electronic environment over several nanometers and several hundred nuclei Noella D'Souza, Kieren A Harkins, David Marchiori, Paul M Schindler, Emanuel Druga, Maxwell McAllister, Marin Bukov, Ashok Ajoy Controlling and discriminating nuclear spins in an electronic spin environment is a key to several applications including for quantum registers, memories, and sensors constructed out of nuclear spins. Typically however, there is a limited possibility of spatially distinguishing the spins, other than a small shell where the nuclear resonance frequencies can be significantly shifted from those of the bulk. Previous nanoscale quantum sensing experiments have, for instance, been limited to proximal central spin relaxation effects in small (<20) spin networks. In this work, we experimentally demonstrate a new method to discriminate nuclear spins surrounding an electron spanning several nanometers and involving several hundred nuclei. Our approach involves a novel means of symmetry-breaking of a Floquet Hamiltonian that originally leads to prethermalization of the nuclear polarization, but which is now locally symmetry broken on action of nanoscale gradient from the electronic hyperfine field. This enables the simple ability to discriminate different nuclear “shells” by tracking the polarization spin diffusion dynamics. We demonstrate this experimentally in a model system of 13C nuclear spins surrounding an NV center electron in diamond. Applications to spatially resolved quantum sensing, and the ability to rewritably engineer spin polarization texture into these nuclei will be discussed. |
Tuesday, March 7, 2023 10:12AM - 10:24AM |
F74.00010: Diamond bullseye antennas for enhanced quantum collection efficiency Anchita Addhya, Clayton T DeVault, Zixi Li, Xinghan Guo, Nazar Delegan, David D Awschalom, F. Joseph Heremans, Alexander A High Color centers in wide bandgap materials such as diamond and silicon carbide are excellent candidates for quantum technologies due to their spin initialization, manipulation, and readout. Unfortunately, the host materials for these applications present high intrinsic optical indexes, limiting photon collection due to total internal reflection. In this work, we demonstrate improved collection efficiencies from these color centers with the use of photonic structures, paving the way for efficient communication and sensing protocols. Specifically, we show the fabrication of bullseye antenna resonators etched into thin diamond membranes improve signal collection via Purcell enhancement while simultaneously realizing higher collection efficiency into low NA objectives. The radius and pitch of these structures are numerically optimized to be in resonance with the emission wavelengths of the integrated color centers e.g., nitrogen, silicon, and germanium-vacancy centers. We also experimentally demonstrate that the resonances can be realized across a broad range of wavelengths in the visible and near-infrared. Fabrication of these photonic cavities is shown to be tailorable, enabling flexibility and ease of integration with the chosen emitters. |
Tuesday, March 7, 2023 10:24AM - 10:36AM |
F74.00011: All Optical Initialisation and Readout and Coherent Population Trapping of a Single Germanium Vacancy in Diamond Chris Adambukulam, Hyma H Vallabhapurapu, Brett C Johnson, Andrea Morello, Arne Laucht Optically active defects in diamond have received considerable interest as platforms for quantum information processing. Yet defects that offer the necessary photonic and spin properties have remained elusive. Here, we investigate the recently discovered, negatively charged germanium vacancy which has attractive spectral properties: its highly stable optical transitions, high Debye-Waller factor and short excited state lifetime. We demonstrate the capability to address the spin sub-levels of the germanium vacancy and thus, perform all optical spin initialisation and readout. Additionally, we generate dark coherent superpositions of the germanium vacancy spin states through coherent population trapping and use Raman spectroscopy to probe the hyperfine structure between the high spin (I=9/2) host 73Ge nuclear spin and the GeV electron spin. [1] C. Bradac, et. al., Nat. Comms. 10, 5625 (2019). |
Tuesday, March 7, 2023 10:36AM - 10:48AM |
F74.00012: Manipulating charge states in diamond via resonantly-driven near-field interactions with proximal germanium vacancies Zixi Li, Xinghan Guo, Francesco Andreoli, Yu Jin, Anil Bilgin, Giulia Galli, Darrick Chang, Alexander A High We report on the local manipulation of the charge state of vacancies in diamond, where the resonant excitation of a proximal germanium-vacancy (GeV) center provides a local energy source to charge and discharge the vacancy. We observe that GeV frequently exhibits a splitting of the zero-phonon line (with splitting magnitude 100 MHz – 3 GHz) and spectral hopping between the two transitions. We demonstrate that the energetic splitting originates from a second-order Stark shift induced by local charges on vacancies. The charge-state switching then manifests as a hopping between distinct energies of the GeV zero-phonon line. We show that resonant excitation of the GeV can drive the charge state of the local vacancies. We investigate the dynamics of this process and present a theory for the interaction based on the local optical field of the GeV under resonant excitation. |
Tuesday, March 7, 2023 10:48AM - 11:00AM |
F74.00013: Formation of Shallow Indium Donor Qubits in ZnO via Ion Implantation Xingyi Wang, Christian Zimmermann, Michael Titze, Lasse Vines, Vasileios Niaouris, Samuel H D’Ambrosia, Ethan Hansen, Edward S Bielejec, Kai-Mei C Fu The indium substitutional donor (In0Zn) in ZnO is an emerging semiconductor spin qubit with optical access via the donor-bound exciton (In0ZnX). In this work, we controllably introduce In0Zn into ZnO as a donor via ion implantation and post-implantation annealing. The inhomogeneous optical linewidths for the implanted In0ZnX transition is 7 GHz at 2 K, comparable to what is observed for in-grown In0Zn ensembles in commercially-available ZnO single crystals, and only 20 times broader than the lifetime-limited linewidth. The longitudinal spin relaxation time (T1) of implanted In0Zn is measured to be 4 ms at 7 T, four times longer than what has been found for in-grown Ga donors in our previous work [1]. T1 increases with decreasing magnetic field following the expected inverse power-law [2]. Optical pumping and coherent control of the implanted In0Zn is shown using two resonant lasers at 7 T. All-optical coherent control is demonstrated via coherent population trapping (CPT). The CPT signature observed at low excitation powers indicates the presence of ten distinct features, as expected due to the strong hyperfine interaction between the electron bound to In0Zn and the In nuclei (spin = 9/2). Our results indicate that for implanted In0Zn access of nuclear spin degrees of freedom for quantum memories may be achievable. |
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