Electrical and optical manipulation of telecom band Si color centers in p-i-n light emitting diode like structures*

We report the electrical and optical manipulation of telecom band color centers in a Si based p-i-n type light emitting diode (LED) structure  that was fabricated using laser-plasma driven ion implantation. In this approach, a petawatt laser is employed to generate a high flux, high energy beam of B ions which are used to dope an n-type Si substrate (~1.4x10²² B/cm³ observed). Photoluminescence and electroluminescence from W, G and C centers were observed on the same sample at the same spot along with first experimental observation of Stark shift from W center while the device was under reverse bias. This would enable electrical control of resonance between quantum emitter and photonic crystal cavity. This new ion implantation approach not only allows fabrication of LED type structures in a single step but also forms the color centers without the requirement of post implantation annealing due to its dual pulse behavior. Silicon doped with high concentrations of B can also form a superconducting phase and we will also present results from temperature dependent resistivity measurements.