Bulletin of the American Physical Society
APS March Meeting 2023
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session EE03: V: Semiconductor Qubits |
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Sponsoring Units: DQI Chair: Biswajit Datta, City university of New York Room: Virtual Room 3 |
Monday, March 20, 2023 10:00AM - 10:12AM |
EE03.00001: Towards a depletion mode single-hole spin qubit in Ge Jaime Saez Mollejo, Josip Kukucka, Daniel Jirovec, Yona Schell, Andrea Ballabio, Danny Chrastina, Giovanni Isella, Georgios Katsaros Group IV spin qubits are promising candidates for the realization of quantum processors due to their scalability, CMOS compatibility and long coherence times. In particular, Ge has become a very attractive platform because of the low effective mass and strong spin orbit interaction, which allows electrically driven spin qubits. From 2018 and within just three years a Loss-DiVincenzo (LD) [1], a singlet-triplet hole spin qubit [2], two-qubit gate devices [3] and a four-qubit Ge quantum processor [4] have been realized demonstrating the potential of Ge for quantum information [5]. Here we show our progress towards a depletion mode single-hole spin qubit in a Ge/SiGe heterostructure platform. |
Monday, March 20, 2023 10:12AM - 10:24AM |
EE03.00002: cQED with grAl resonators and hole spins in germanium Marián Janík, Carla Nataly Borja Espinosa, Oliver Sagi, Andrea Ballabio, Pasquale Scarlino, Ioan M Pop, Daniel Chrastina, Giovanni Isella, Georgios Katsaros Hole spins enable fast and all-electric control [1], due to strong intrinsic spin-orbit interaction (SOI). Since the SOI also couples spins to the electric field of a photon in a microwave resonator, strong hole-spin-photon coupling is expected. Recent experiment with holes in silicon indeed confirms this prediction [2], with the coupling largely exceeding the best figures reported with electrons [3, 4]. |
Monday, March 20, 2023 10:24AM - 10:36AM |
EE03.00003: Towards high-fidelity charge state control of the NV center at 100 K Margriet van Riggelen, Hans P Bartling, Tim Hugo Taminiau The nitrogen-vacancy (NV) center in diamond is a promising platform for quantum technologies. Low temperature (<10 K) experiments have shown the suitability of the color center for quantum communication, sensing, simulation and computation. Remarkably, the NV center allows for room temperature as well, though the electron spin relaxation time poses a limit to the electron spin coherence. We performed experiments at 100 K, a temperature at which the relaxation time of the electron spin of the NV center is long (>1 s) compared to room temperature, while cooling is much less demanding than for reaching the commonly studied regime of <10 K. |
Monday, March 20, 2023 10:36AM - 10:48AM |
EE03.00004: Quantum state transfer of hole spin qubits in quantum dots David F Fernández, Yue Ban, Gloria Platero Hole spins in semiconductor quantum dots (QDs) are attracting significant attention as candidates for fast, highly coherent, spin qubits [1-4]. They have long coherence time due to the weak hyperfine coupling to nuclear spins and rapid operation times due to the inherently strong spin-orbit coupling (SOC). |
Monday, March 20, 2023 10:48AM - 11:00AM |
EE03.00005: The diabatic SWAP gate based on Si-MOS quantum dots Ming Ni The SWAP gate, as a basic two-qubit gate, is essential for the realization and scale of the quantum process. The coherence exchange oscillation, under the condition of J>>ΔEz, is an excellent phenomenon capable of demonstrating the two quantum gates. Our experiments present a coherence SWAP gate in an isotopically enriched silicon quantum dot system. By diabatic modifying the detuning, we observe the ratio of J/ΔEz changes more than two orders of magnetics, thus guaranteeing the independent Elzerman readout while realizing the exchange oscillation. Combined with the independent single shot readout, we estimate the upper bound of the SWAP gate fidelity, which is improved by the magnetic field gradient between the two quantum dots. Our experiment provides a scheme to demonstrate the high fidelity coherence SWAP gate for the devices with the low longitude magnetic field gradient between qubits. |
Monday, March 20, 2023 11:00AM - 11:12AM |
EE03.00006: Atomic-Precision Placement of Single Donors in Silicon Quantum Devices with 100% Yield Jonathan Wyrick, Pradeep N Namboodiri, Fan Fei, Joseph B Fox, Utsav Utsav, Richard M Silver Quantum devices such as qubits and analog quantum simulators fabricated out of individual or small clusters of donors in silicon are highly sensitive to the precise atomic arrangement of those donors relative to one another and surrounding control electrodes. A variation of +/- 1 atom at a key site within a device alters the potential landscape and therefore device behavior significantly. Until recently, attempts to fabricate true single-atom precision P in Si devices using the scanning probe hydrogen depassivation lithography (HDL) technique have met with failure rates of 30% - 40% per intended single-atom site. We present here a modification of HDL in which STM tip-based molecular manipulation enables a dramatic increase in yield with 100% success when incorporating P into Si. We discuss the details of this technique as well as 2x2 donor array devices where each array site is gated that have been fabricated with single-atom precision. |
Monday, March 20, 2023 11:12AM - 11:24AM |
EE03.00007: Theory of coherent electron shuttling using pre-defined and moving quantum dots in Si Jan A Krzywda, Lukasz Cywinski Coherent electron shuttling can improve design of scalable quantum computers [1]. We have identified challenges in two shuttling modes: Bucket Brigade (BB) and Conveyor Belt (CB). In BB, the electron is moved using sequential dot-to-dot adiabatic transition. By considering realistic environment of Si QDs, we have found single transition error to be non-monotonic function of sweep rate. We have found an optimal sweep rate, at which transfer fidelity can exceed 99.9%, provided tunnel-coupling induced gap at zero detuning tc>30μeV [2,3]. However having uniform tc in long QDs array might be hard to achieve. |
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