Bulletin of the American Physical Society
APS March Meeting 2023
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session D40: 2D Materials: Ferroic BehaviorFocus
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Sponsoring Units: DMP Chair: Yang Liu; Salvador Barraza-Lopez, University of Arkansas Room: Room 232 |
Monday, March 6, 2023 3:00PM - 3:36PM |
D40.00001: Ladder Ferroelectrics Invited Speaker: Moshe Ben Shalom Ferroelectricity in atomically thin bilayer structures has been recently predicted and measuredin two-dimensional (2D) materials with hexagonal non-centrosymmetric unit-cells. Interestingly, the crystal symmetry translates lateral shifts between parallel 2D layers to sign changes intheir out-of-plane electric polarization, a mechanism termed"Slide-Tronics"[1]. These observations have been restricted to switching between only two polarization states under low charge carrier densities, limiting the practical application of the revealed phenomena. To overcome these issues, one shouldexplore the nature of polarization in multi-layered van der Waals (vdW) stacks, how it is governed by intra-and inter-layer charge redistribution, and to whatextent it survives the additionof mobile charge carriers. To explore these questions, we conduct surface potential measurements of parallel WSe2and MoS2multi-layers with aligned and anti-aligned configurations of the polar interfaces[2]. We find evenly spaced, nearly decoupled potential steps, indicating highly confined interfacial electric fields, whichprovide means to design multi-state "Ladder-Ferroelectrics". Furthermore, we find that the internal polarization remains significant upon electrostatic doping of mobile charge carrier densitiesas high as 1013 cm-2, with substantial in-plane conductivity. Using density functional theory (DFT)calculations, we trace the extra charge redistribution in real and momentum spacesand identify an eventual doping-induced depolarization mechanism. |
Monday, March 6, 2023 3:36PM - 3:48PM |
D40.00002: Ferroelectricity-driven inhomogeneity and giant nonlocality in Graphene/twisted WSe2 heterostructure Rahul Debnath The artificial moiré superlattices have extended our design space by allowing two atomically thin layers to be rotated at a desired twist angle to form a moiré pattern that modifies the electronic band structure of the system. Unlike twisted bilayer graphene, where the flat bands occur only near the magic angle of 1.10 due to delicate competition between the hybridization energy and the kinetic energy; twisted bilayer TMDC offers a range of twist angles, where the hybridization energy and the highly commensurate domains are varied with the moiré wavelength. However, unlike graphene, TMDC materials show a massive contact resistance. To overcome this issue, we used graphene as a sensing layer to probe the electronic effects of the underlying twisted TMDC structure on monolayer graphene. Here, we report the observation resistance features on either side of the graphene's Dirac point, which can be tuned further by applying a transverse electric field. The appearance of multiple resistance peaks can be explained by the coexistence of the MX/XM domains of twisted WSe2 having opposite polarization that can be filliped by applying a vertical electric field, which indicates the likely signature of ferroelectricity. We quantitatively characterize the hysteretic ferroelectric gating (coming from the twisted WSe2 between the bottom gate and the graphene) using the reference of an independent background doping (hBN Top gate) provided by normal dielectric gating. We also observe the electric field tunability of the nonlocal resistance, which cannot be explained by the classical ohmic contribution. In our device, due to the proximity of graphene to the ferroelectric twisted WSe2, non-zero Berry Curvature could emerge in graphene by breaking the inversion symmetry of the lattice globally. We further explore the magnetotransport properties of the system and find that the magnetoresistance of the sample increases with an in-plane magnetic field. Our device design not only combines the individual characteristics of the 2D materials but also opens up a new possibility to study the exotic physical properties absent in the parent compounds. |
Monday, March 6, 2023 3:48PM - 4:00PM |
D40.00003: Evolution of concomitant pseudogap formation with the β−to−β′ structural phase transition in melt-quenched As2Te3 upon chemical doping. Jeremy P Dion, Maureen Reedyk The chalcogenides are a family of layered compounds that have been utilized in a wide range of applications, and have been shown to exhibit exotic states such as superconductivity, charge density waves, and topological insulation. As2Te3 is a layered semiconducting material with three different allotropic phases, α, β and β′[1]. β-As2Te3 is of interest as it is isostructural to Bi2Te3, a superconducting, topological insulator[2]. A large resistivity anomaly is observed upon cooling from β-As2Te3 into the low temperature β' phase. |
Monday, March 6, 2023 4:00PM - 4:12PM |
D40.00004: Moiré-driven multiferroic order in twisted CrCl3, CrBr3 and CrI3 bilayers Adolfo O Fumega, Jose Lado Layered van der Waals materials are one of the most promising platforms to engineer novel states of matter. In particular, the twist angle that can be imposed between layers has revolutionized the artificial design of materials, by driving different symmetry-breaking orders. |
Monday, March 6, 2023 4:12PM - 4:24PM |
D40.00005: Anisotropic friction and nano-welding in 2D ferroelectric SnSe monolayer nanoplates Jingrong Ji, John W Villanova, Salvador Barraza-Lopez, Stuart Parkin, Kai Chang 2D ferroelectric materials have been developed rapidly in the recent years because of its huge potential for creating the artificial multiferroics and novel non-volatile devices. Therefore, understanding the coupling between the thin film and graphene substrate is essential. Here, we report the anisotropic friction in SnSe monolayers first discovered by scanning tunneling microscope due to the strong commensuration between the monolayer and graphene substrate, while the SnSe bilayers show more isotropic manner on epitaxial graphene substrate. By controllably moving SnSe nanoplates, the nanoplates can merge without creating any grain boundary by in-situ annealing. These results show potential for controllably manipulation and construction of nanostructures among 2D materials. |
Monday, March 6, 2023 4:24PM - 4:36PM |
D40.00006: Switchable moiré potentials in ferroelectric WTe2/WSe2 superlattices Kaifei Kang, Wenjin Zhao, Yihang Zeng, Kenji Watanabe, Takashi Taniguchi, Jie Shan, Kin Fai Mak Moiré materials, with superlattice periodicity many times the atomic length scale, have enabled the studies of strong electronic correlations and band topology with unprecedented tunability. However, nonvolatile control of the moiré potentials, which could allow on-demand switching of the superlattice effects, has not been achieved to date. Here we demonstrate the switching of the correlated and moiré band insulating states and the associated nonlinear anomalous Hall effect by the ferroelectric effect. This is achieved in a ferroelectric WTe2 bilayer of the Td structure with a centered-rectangular moiré superlattice induced by interfacing with a WSe2 monolayer of the H structure. The results can be understood in terms of polarization-dependent charge transfer between two WTe2 monolayers, which possess very different moiré potential depths; ferroelectric switching thus turns on/off the superlattice. Our study demonstrates the potential of creating new functional moiré materials by incorporating intrinsic symmetry-breaking orders |
Monday, March 6, 2023 4:36PM - 4:48PM |
D40.00007: High-performing van der Waals heterostructure photodetectors using CuInP2S6-based ferroelectric gate Wei-Qing Li, Jia-Xin Li, Po-Liang Chen, Chang-Hua Liu Two-dimensional (2D) ferroelectric materials, which own the stable layered structures and reduced surface energy, have recently attracted great attentions. So far, multiple have exploited these emerging ferroelectric materials to demonstrate atomically-thin and multi-functional electronic devices, such as memory and logical devices. But their potential applications on optoelectronics remain largely unexplored. Here, we demonstrate a new type of van der Waal heterostructure photodetector that includes a monolayer graphene channel and a CuInP2S6-based ferroelectric gate. By exploiting this ferroelectric gate, we show our developed detector, operated within the visible range, can exhibit ultrahigh photoresponsivity approaching 105 A/W as well as fast operation speed (~MHz bandwidth). In addition, our characterization indicates that its noise equivalent power can be as low as ~tens pW/Hz1/2 at room temperature operation. Such results indicate our developed detector can be useful to diverse sensing or spectroscopic applications. |
Monday, March 6, 2023 4:48PM - 5:00PM |
D40.00008: Thickness-dependent vibrational and ferroelectric properties in CuInp2S6 Rahul Rao, Stephanie D Lough, Ryan Selhorst, Benjamin S Conner, Masa Ishigami, Michael A Susner
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Monday, March 6, 2023 5:00PM - 5:12PM |
D40.00009: Slippery paraelectric transition-metal dichalcogenide bilayers Joseph E Roll, Juan M Marmolejo-Tejada, Shiva P Poudel, Salvador Barraza-Lopez, Martin A Mosquera Traditional ferroelectrics undergo thermally induced phase transitions whereby their structural symmetry increases. The associated higher-symmetry structure is dubbed paraelectric. Ferroelectric transition-metal dichalcogenide bilayers have been recently shown to become paraelectric [1], but not much has been said of the atomistic configuration of such a phase. In this presentation, numerical calculations that include molecular dynamics showcase this paraelectric atomistic structure [2]. |
Monday, March 6, 2023 5:12PM - 5:24PM |
D40.00010: Chemical prediction of Skyrmion lattice candidates Leslie M Schoop, Grigorii Skorupskii, Fabio Orlandi, Milena Jovanovic, Rinsuke Yamada, Pascal Manuel, Max Hirschberger Chiral spin textures such as magnetic skyrmions offer a route towards more energy-efficient datastorage |
Monday, March 6, 2023 5:24PM - 6:00PM |
D40.00011: Title: "Explaining stabilization and switching of polarization in 2D Cu-thiophosphate ferroelectrics" Invited Speaker: Panchapakesan Ganesh
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