Bulletin of the American Physical Society
APS March Meeting 2023
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session B52: Electronic Structure: Theory and Spectra
11:30 AM–2:18 PM,
Monday, March 6, 2023
Room: Room 308
Sponsoring
Unit:
FIAP
Chair: Guru Khalsa, Cornell University
Abstract: B52.00002 : Structural study of Al(1-x)ScxN Thin Films by Mapping of Large Volumes in Reciprocal Space*
11:42 AM–11:54 AM
Presenter:
Anita Verma
(Cornell University)
Authors:
Anita Verma
(Cornell University)
Jakob Gollwitzer
(Cornell University)
Joseph Casamento
(Cornell University)
Guru Khalsa
(Cornell University)
Stephanie Matson
(Cornell University)
Jacob Ruff
(Cornell University)
Debdeep Jena
(Cornell University)
Andrej Singer
(Cornell University)
Collaborations:
Anita Verma, Jakob Gollwitzer, Joseph Casamento, Guru Khalsa, Stephanie Matson,
Jacob P.C. Ruff, Debdeep Jena, Andrej Singer
The recently discovered III-V semiconductor-based ferroelectric material AlScN opens a new paradigm for advancement in acoustoelectric and memory technology. Here we studied the Sc content-induced structural dynamics of Al(1-x)ScxN thin films grown on GaN substrates. We have measured a large volume of reciprocal space of Al(1-x)ScxN thin films with the help of a large area detector at Cornell High Energy Synchrotron Source. Our results reveal that the ‘c/a’ ratio decreases for Al(1-x)ScxN with increasing Sc content. Additionally, a change in integral peak intensity is observed.Lowering the ‘c/a’ ratio with Sc content will increase the internal parameter u (length of metal-nitrogen bond parallel to the c-axis). Structurally, this flattening (reduction in c/a ratio) of the wurtzite-type (space group: P63mc) unit cell due to Sc-content, may lead to ferroelectric behavior. Our work provides new information on the Sc-content-induced structural dynamics of Al(1-x)ScxN, which will help to create a platform for tuning ferroelectricity in the semiconductor.
*DOE
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