Bulletin of the American Physical Society
APS March Meeting 2023
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session A52: Active Optical DevicesIndustrial
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Sponsoring Units: FIAP Chair: Oleksiy Svitelsky Room: Room 308 |
Monday, March 6, 2023 8:00AM - 8:12AM |
A52.00001: Spiking Neural Network Algorithms for Superconducting Optoelectronic Hardware Ryan O'Loughlin Neuromorphic computing seeks to draw inspiration from the brain in order to reinvent artificially intelligent systems with hopes to exploit the flexibility, speed, and energy efficiency of organic intelligence. This effort is defined by two major (and often disconnected) fronts—hardware development and algorithms. The prior defines the physical structure of the computational substrate in question and the latter determines the paradigm through which information is processed. Progress on both fronts is abundant, but less often is it synchronized. We here explore a deliberate approach of designing custom spiking neural network (SNN) algorithms on simulated superconducting optoelectronic network (SOEN) hardware. Our results show promise for this coordinated approach, with progress on complex computational tasks such as speech and image recognition. Moreover, this study may be leveraged to justify the physical development of SOENs and therefore bring to fruition their light-speed information processing and brain-level scalability. |
Monday, March 6, 2023 8:12AM - 8:24AM |
A52.00002: Laser-based spectroscopic technique for subsurface measurements C R Bhatt, Daniel Hartzler, Dustin McIntyre While most of the traditional techniques have limitations for subsurface measurements, a laser-based technique known as laser-induced breakdown spectroscopy (LIBS) has appeared as a promising tool for continuous monitoring in surface and subsurface levels. LIBS is suitable even in harsh environments, including high temperature and pressure for stand-off measurements. In this presentation, optical designs of benchtop setup and miniaturized probe will be discussed for multi-elemental detection. The results obtained from experiments for detection and quantification of selected analytes including critical and hazardous elements will be presented. |
Monday, March 6, 2023 8:24AM - 8:36AM |
A52.00003: Wrinkled 2D Materials for Stretchable Optoelectronic Devices Yang-Fang Chen Stretchable, flexible, and bendable devices are an emerging class of future wearable technology, which have attracted considerable attentions, including all kinds of electronic and optoelectronic devices. Particularly, because of the excellent mechanical flexibility, 2D materials and quantum dots/disks (QDs) such as graphene, TMDCs, MoS2 QDs, and CQDs are suitable to provide high stability and durability in the fabrication of stretchable devices. However, in terms of 2D based optoelectronic devices, the photoresponsivity and luminousness are low and weak owing to weak absorption of their few-layered thickness. To overcome this shortcoming, herein, the wrinkled 2D materials based stretchable optoelectronic devices such as highly sensitive and stretchable hybrid 2D heterostructured and wrinkled photodetectors based on MoS2 QDs/graphene, and all-carbon stretchable and cavity-free white lasers have been designed and demonstrated. The underlying mechanism can be attributed to the fact that the wrinkled structure is useful to induce light trapping effect, generate more electron-hole pairs and enhance photosensitivity for photodetectors. On the other hand, the emissive light from the crumpled structure of CQDs/graphene can be trapped and enhanced to achieve population inversion with the multiple scatterings in between the crumpled graphene structures. Therefore, our results open new excellent possibilities for developments of future stretchable and wearable optoelectronic devices. |
Monday, March 6, 2023 8:36AM - 8:48AM |
A52.00004: Fiber Optic Interferometry for Nanomechanical Displacement Detection Anna Rathbun, Oleksiy Svitelskiy Nanoelectromechanical (NEMS) resonators, with their small masses, high frequencies, and low energy dissipation, show potential for sensitive and precise applications in detecting mass, force, and other physical quantities. Optical interferometry is an important tool for NEMS. Most NEMS instruments utilize costly and hard-to-tune free-space design, whereas fiber optic methods have the potential to be more stable, compact, and cost-effective. We present an interferometer and an imaging system based on a fiber-optic circulator and a 635 nm laser. Having passed through the fiber, light is reflected from the NEMS surface and from the tip of the fiber. The circulator directs reflected light to the detector, where interference of the two reflected beams occurs. For alignment purposes, we developed an imaging system that utilizes the nature of this interference by taking the relative magnitude of the returning signal at each point in a raster scan of an area as large as 40 x 40 µm on the sample. This data is compiled with each data point being a pixel that's brightness corresponds to the relative signal intensity. Excited using an ultrasound transducer, NEMS oscillations cause oscillations of the interference signal that are recorded with a spectrum analyzer. The results of this system are presented. The authors are thankful to Atakan B. Ari and M. Selim Hanay for providing our sample and Kamil Ekinci for continuous help. |
Monday, March 6, 2023 8:48AM - 9:00AM |
A52.00005: Reduced material loss in thin-film lithium niobate waveguides Amirhassan Shams-Ansari, Guanhao Huang, Lingyan He, Zihan Li, Jeffrey Holzgrafe, Marc Jankowski, Mikhail Churaev, Prashanta Kharel, Rebecca Cheng, Di Zhu, Neil Sinclair, Boris Desiatov, Mian Zhang, Tobias J Kippenberg, Marko Loncar Owing to its large nonlinearity, wide-transparency window, and low optical loss, thin-film lithium niobate (TFLN) is a promising candidate for applications in classical and quantum domains. Several devices including single-photon sources, ultra-high bandwidth modulators with low Vπ, integrated frequency comb sources, and frequency shifters, have been demonstrated on this platform. However, realizing the generation of TFLN devices such as broader electro-optic frequency combs, high-efficiency microwave-to-optical transducers, and single photon nonlinear devices, rely on lowering the optical losses significantly. To date, the lowest optical loss achieved on TFLN microring devices is 2.7 dB/m. Sidewall-induced scattering losses and material absorption can hinder achieving lower losses. One can improve the former by implementing a better fabrication process, while the latter is caused by the material quality and absorption mechanisms. We show that post-fabrication annealing and low-temperature oxide cladding can significantly reduce optical absorption in TFLN waveguides. We quantify the intrinsic absorption losses using a TFLN microring resonator and Kerr-calibrated linear response measurement. Using our newly developed characterization method, we measure the material-limited loss of 0.2 dB/m and nonlinear refractive index of n2 = 1.61 × 10−19 m2 W−1 for our TFLN devices. |
Monday, March 6, 2023 9:00AM - 9:12AM Author not Attending |
A52.00006: Universal Reconfigurable Linear Photonic Circuits using Discrete Fractional Fourier Transform Matt Markowitz, Mohammad-Ali Miri Performing fast matrix-vector multiplication near the speed of light is an important task in cutting edge optical classical and quantum information processing and machine learning technologies. On-chip photonic realization of such a device is built on suitable parametrization of arbitrary discrete unitary operations and their decomposition into simple operations that can be realized with simple integrated photonic components. Here, we introduce a novel architecture for parametrization of complex unitary matrices that allows for efficient photonic implementation of arbitrary linear discrete unitary operators. The proposed architecture is built on factorizing an NxN unitary matrix into interlaced discrete fractional Fourier transforms and N-parameter diagonal phase shifts. We show that such a configuration can represent arbitrary unitary operators with N+1 layers of phase modulation. The universality of this architecture is investigated numerically by considering the norm of representation error versus the number of phase layers which results in an abrupt phase transition at N+1 layers. We propose an integrated photonic circuit realization of this architecture with coupled waveguide arrays and reconfigurable phase modulators. |
Monday, March 6, 2023 9:12AM - 9:24AM |
A52.00007: Characteristic charge density pattern of Bennett multipole surface plasmon mode revealed by TDDFT simulation Jiantao Kong The multipole branch of surface plasmon modes was theoretically predicted [1] and experimentally observed [2] long time ago, yet its charge and field patterns do not manifest easily in classical electromagnetism simulation [3]. We utilized the ab initio time dependent density functional theory (TDDFT) [4] and simulated the electromagnetic response of a jellium sphere. The multipole surface plasmon mode was successfully identified, and its dispersion relation and characteristic charge density pattern near the surface were clearly revealed. |
Monday, March 6, 2023 9:24AM - 9:36AM |
A52.00008: Arbitrary Electro-Optic Bandwidth and Frequency Control in Lithium Niobate Optical Resonators Jason F Herrmann, Devin J Dean, Christopher J Sarabalis, Vahid Ansari, Kevin K Multani, Timothy P McKenna, Jeremy D Witmer, Amir H Safavi-Naeini Lithium niobate modulators are essential for optical communications infrastructure, and thin-film lithium niobate (TFLN) enables novel integrated photonic and quantum technologies. In situ tunability over the bandwidth and frequency of resonant systems would enable using photonic resonators as optical memories while also accommodating fabrication intolerance. We demonstrate bandwidth and frequency tuning over modes in a racetrack resonator by leveraging the electro-optic effect in lithium niobate. Our device, fabricated in TFLN atop a sapphire handle, consists of a racetrack resonator coupled to a feedback waveguide at two points. Applying DC bias voltage across the feedback loop introduces interference in the coupling. We observe a bandwidth tunability ratio of ~25 (max bandwidth/min bandwidth) at 1603.4 nm, with frequency tunability of ~680 MHz/V. We demonstrate that a Markovian input-output model does not fully capture this system's dynamics. Using scattering matrix theory, we derive a model to calibrate the mode's frequency and bandwidth tunability and to predict tuning with arbitrary bias voltage. |
Monday, March 6, 2023 9:36AM - 9:48AM |
A52.00009: An Integrated Waveguide Array Lens for Wide-Angle Beam Steering Mostafa Honari Latifpour, Mohammad-Ali Miri We introduce a new approach for waveguide lensing based on an array of waveguides with distributed coupling. By engineering the transverse distance between adjacent waveguides, we design a Jx lattice that guarantees equidistant propagation constants for the array supermodes. This enables the lensing functionality at half the self-imaging length of the array, without the need for any gradient index control. The proposed lens allows for beam steering through selective channel excitation. The proposed lens can serve as an integral component of integrated focal plane arrays. We present the design of a compatible integrated grating coupler that allows for efficient off-chip radiation, with simulation results showing that beam steering with a field of view of 60 degrees can be achieved. |
Monday, March 6, 2023 9:48AM - 10:00AM |
A52.00010: Excitation and Active Control of Charge Density Waves at Degenerately Doped PN++ Junctions Raj K Vinnakota, Zuoming Dong, Andrew Briggs, Seth Bank, Daniel Wassertman, Dentcho Genov We present a semiconductor-based plasmonic electro-optic modulator based on excitation and active control of surface plasmon polaritons (SPPs) at the interface of degenerately doped In0.53Ga0.47As pn++ junctions. Set of devices, which we refer to as a surface plasmon polariton diode (SPPD), are fabricated and characterized electrically and optically. Optical characterization predicts far-field voltage aided reflectivity modulation for mid-IR wavelengths. Numerical device characterizations using self-consistent electro-optic Multiphysics model have been performed to confirm the experimental findings predicting data rates up to 1Gbits/s and 3dB bandwidth as high as 2GHz. Our findings also show that decreasing the device dimensions can potentially lead to data rates more than 50Gbits/s, thus potentially providing a pathway toward fast all-semiconductor based plasmotronic devices. |
Monday, March 6, 2023 10:00AM - 10:12AM |
A52.00011: The Effect of Core Separation Distance on Pulse Propagation in 6-Core Microstructure Optical Fiber Albert DiBenedetto, Jay E Sharping Optical fibers, in addition to being excellent for data transmission, can also be useful as an active component within photonic devices. When pulses propagate through a single core within a microstructure optical fiber (MOF), a variety of nonlinear effects via the Optical Kerr Effect may occur which result in pulse reshaping, spectral broadening, and Four Wave Mixing. In addition to nonlinear effects in a single core, core-to-core coupling may happen. The extent to which such nonlinear effects occur depends on the core separation distance in MOF. We report on pulse propagation in two types of 6-core MOF with core separation distances of 7 m and 10 m, respectively. We observe phase-matched Four Wave Mixing in the presence of core-to-core coupling in 5 meter long multi-core MOFs. Understanding pulse propagation in both the linear and nonlinear regimes is of interest for space-division multiplexing, entangled photon pair generation, and quantum communication. |
Monday, March 6, 2023 10:12AM - 10:24AM |
A52.00012: All-optical logic gates using spatio-temporal modulation Amir Targholizadeh, Hamidreza Ramezani In recent years there has been a tremendous effort in proposing different types of tunable all-optical gates. However, the proposed devices can only be used to generate only one gate. Here we propose a new mechanism to device all-optical gates that can be used to assemble any type of optical gates including XOR, OR, NOT gates. Our logic gate is based on exceptional points induced in the spatiotemporally modulated waveguide with active susceptibility. Our specific modulation mechanism allows for unidirectional couplings between the three harmonics of the waveguide. By the right excitation of the waveguide at the fundamental harmonic and the third harmonic, we can obtain the desired second harmonic demonstrating the required output for the creation of XOR, OR, and NOT. Other types of gates such as AND, NAND, NOR, XNOR can be directly obtained from these three basic gates. |
Monday, March 6, 2023 10:24AM - 10:36AM |
A52.00013: Enhanced Polarization Response of Epsilon-Near-Zero Materials at Near-Infrared Wavelengths Ramya Mohan, Jonathon R Schrecengost, Angela Cleri, Maxwell Tolchin, Victor Ortiz, John Tomko, Richard Wilson, Joshua D Caldwell, Jon-Paul Maria, Noel C Giebink, Patrick Hopkins Epsilon near zero (ENZ) materials are known to exhibit a strong plasmonic and optoelectronic response around their ENZ wavelengths, making them desirable for several photonics applications. Of particular interest are transparent conducting oxides such as CdO (Cadmium oxide) and ITO (Indium tin oxide) thin films that feature improved transmittance and low resistivity at ENZ wavelengths. In this work, we focus on using pump-probe laser spectroscopy to interrogate the magneto-optic response of Gd-doped and In-doped CdO films at near-IR ENZ wavelengths (0.760 – 2.2 μm). We use both laser reflectance (Kerr effect) and transmittance (Faraday effect) measurements to determine the wavelength-dependent polarization response of CdO:Gd and CdO:In films, which we then utilize to calculate the Verdet constant. Our magneto-optic experiments, when performed in static-mode, reveal that CdO:Gd films feature extremely high Verdet constants at ENZ wavelengths. Through time-resolved experiments, we shed light on the quasi-particle interactions that enable energy relaxation mechanisms in these systems. |
Monday, March 6, 2023 10:36AM - 10:48AM |
A52.00014: Rapid nonlinear imaging spectroscopy for advanced material characterization Torben Lennart Purz, Eric W Martin, Blake T Hipsley, William G Holtzmann, Pasqual Rivera, Adam Alfrey, Kelsey M Bates, Ronald Ulbricht, Hui Deng, Xiaodong Xu, Steven T Cundiff 2D materials are a promising material platform for quantum information science, photovoltaics, and related device applications. However, it is important to distinguish between the intrinsic properties of these materials and properties due to extrinsic effects such as defects, inhomogeneity, or strain. |
Monday, March 6, 2023 10:48AM - 11:00AM |
A52.00015: Ultralow frequency nanoimaging of 2D materials Dmitri V Voronine Semiconducting layered 2D materials have recently attracted interest due to their fascinating properties and potential applications. Imaging and control of interlayer interactions provides tunability of optical and electric properties. Ultralow frequency Raman spectroscopy is sensitive to interlater interactions. In this work, ultralow frequency tip-enhanced Raman scattering (ULF-TERS) is used for nanoscale characterization of complex lateral/vertical/twisted transition metal dichalcogenide heterostructures. Spatial resolution and signal enhancement of low and high frequency modes is compared. The corresponding enhancement mechanisms are elucidated. These results may be used to design novel quantum optoelectronic nanodevices. |
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