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SbPS₄ is a direct gap semiconductor with a bandgap of 3 eV. It is known to have a one-dimensional van der Waals structure. SbPS₄  samples were mechanically exfoliated onto SiO₂ substrates. Bundles of SbPS₄ were investigated with low temperature photoluminescence (PL) spectroscopy at 4 K. We investigated the excitation wavelength dependence of the PL and confirmed that the bandgap occurs near 3 eV. We observed PL from SbPS₄ with a strong emission peak near 1.53 eV. Polarization dependent measurements revealed that the PL is linearly polarized along the bundle direction. I will discuss possible origins of the PL including exciton formation and defect bound emission.