Bulletin of the American Physical Society
APS March Meeting 2022
Volume 67, Number 3
Monday–Friday, March 14–18, 2022; Chicago
Session Z68: Functional DevicesRecordings Available
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Sponsoring Units: DMP Chair: Son Le, Laboratory for Physical Sciences Room: Hyatt Regency Hotel -Hyde Park B |
Friday, March 18, 2022 11:30AM - 11:42AM |
Z68.00001: Josephson-inductive readout of graphene bolometer Bevin Huang, Woochan Jung, Gil-Ho Lee, Dirk Englund, Kin Chung Fong Ultrafast microwave bolometers that can detect radiation down to the single photon regime are a key technology for developing quantum sensors for radio-astronomy, as well as quantum information processing. While there have been a few demonstrations of microwave single photon detection using superconducting transmon qubits coupled to a cavity, the challenge still remains of how one can best detect and read out single photons across a spectrum of microwave frequencies. In this regard, graphene is an excellent material for microwave sensors; it has an extremely small heat capacity and broadband absorption spectrum. Extending our previous work on graphene-based microwave bolometers [1], we have developed an inductive readout technique that reads out changes in the electronic temperature of the Josephson junction (JJ) weak link. Our technique is able to detect broadband microwave radiation between 10 GHz and 13 GHz, limited only by the bandwidth of the input resonator. Discussions of the operating principles of our readout scheme and ways to improve the NEP will be further discussed in this talk. |
Friday, March 18, 2022 11:42AM - 11:54AM |
Z68.00002: Observation of large Zeeman-like splitting in graphene whispering gallery modes Zhehao Ge, Sergey Slizovskiy, Toyanath Joshi, Takashi Taniguchi, Kenji Watanabe, David Lederman, Vladimir Falko, Jairo Velasco Jr. Monolayer graphene (MLG) hosts massless Dirac fermions with a linear band dispersion that mimics photons. Because of these attributes and its ballistic transport in ultraclean samples, MLG is an ideal platform for the development of electron optic devices. To date, multiple electron optic effects have been experimentally demonstrated in electrostatic MLG pn junctions such as Fabry-Pérot interference, whispering gallery mode (WGM) resonances, and negative electron refraction. Crucially, the MLG pn junction sharpness can significantly affect the transmission probability of its chiral charge carriers across the pn junction. In this talk, I will show our recent scanning tunneling spectroscopy (STS) study of MLG quantum dots defined by circular pn junctions with different pn junction sharpness. By increasing the sharpness of the pn junction, we observe a strong increase in the quality (Q) factor of the WGMs near the pn junction boundary. Furthermore, we observe large and gate tunable Zeeman-like linear splitting of these high Q factor WGMs in a small magnetic field due to their large orbital magnetic moments. Our work indicates graphene WGMs in sharp circular pn junctions can be used for tunable magnetic field sensors. |
Friday, March 18, 2022 11:54AM - 12:06PM |
Z68.00003: Electrically controllable chirality in a nanophotonic interface with a 2D semiconductor Robert T Shreiner, Kai Hao, Amy Butcher, Alexander A High Waveguided optical modes in nanophotonic structures display circularly polarized evanescent fields with wavevector-dependent, transverse spin angular momentum. This optical spin-orbit coupling allows propagation direction-dependent interactions with circularly dichroic materials, yielding chiral light-matter interfaces. Electrical tuning of interface chirality would aid active, switchable non-reciprocity in on-chip optoelectronic and photonic circuitry, but remains an outstanding challenge. Here, we report electrically controllable chirality in a nanophotonic interface with atomically thin monolayer tungsten diselenide (WSe2). We fabricate titanium dioxide (TiO2) waveguides directly on the surface of low disorder, boron nitride-encapsulated WSe2. Following integration, we show that emission from excitonic states into the waveguide can be electrically switched between balanced and directionally biased. Furthermore, we demonstrate that our nanophotonic waveguide can function as a near-field source for valley(spin)-polarized exciton fluxes. Our versatile fabrication approach enables deterministic integration of photonics with low disorder van der Waals heterostructures and opens new pathways towards optically driving their excitonic and charge carrier behavior. |
Friday, March 18, 2022 12:06PM - 12:18PM |
Z68.00004: High-Resolution Hexagonal Subpixels Based on Electrically Focus-Tunable Graphene Photosieves Ho X Vinh, Leslie Howe, Yifei Wang, Garrett K Betzko, Tharindu D. R. R. Mudiyanselag, Lawrence M Prattis, Nguyen Q Vinh The high demand for high-resolution, compact and electrically focus-tunable flat optics in display applications leads to tremendous research on nanoscale diffractive lenses. Graphene with a unique band structure allows controlling carriers by adjusting the Fermi level under the applied electrical field, which changes the transmission characteristics of graphene. It ultimately facilitates the optical focal tuning effect in the graphene-based lens under the applied electrical field. We demonstrate high-resolution hexagonal subpixels based on the graphene photosieve with electrically tunable focusing that enables to control in pixel units of display applications. A high focusing efficiency at a visible wavelength of 532 nm can be achieved with the photosieve thickness of ~12 nm, and the variation of the focal length ~10%. |
Friday, March 18, 2022 12:18PM - 12:30PM |
Z68.00005: Hexagonal Boron Nitride and Graphene Field Effect Transistor-based Neutron Detectors Faris A Almatouq, Alisha Vira, Patrick Connolly, Zhigang Jiang, Phillip N First, Thomas M Orlando Boron-based materials have been proposed as critical components for radiation dosimetry applications in space as well as for radiation shielding, specifically due to their ability to absorb thermal neutrons. Here, we report on developing radiation detector architecture based on hexagonal Boron Nitride (hBN) in conjunction with graphene field-effect transistors. To this end, single crystal growth of natural boron nitride (hNaBN) and isotopically enriched boron nitride (h10BN, h11BN) was done using Ni-Cr metal flux. To optimize the experimental parameters and device geometry, Monte Carlo simulations are performed using Monte Carlo N-Particles code (MCNP) and benchmarked with simulation results from GEANT4 code. Real-time resistance measurements are carried out upon irradiating device prototypes by a 2.5 MeV D-D neutron generator (Starfire nGen-800) with a neutron yield of 1010 neutrons/sec and neutron flux of 106 neutrons/(cm2.sec). |
Friday, March 18, 2022 12:30PM - 12:42PM |
Z68.00006: Coupling of graphene nanoribbons to LaAlO3/SrTiO3 electron waveguides via nanoscale vias Ahmed Omran, Dengyu Yang, Juliana Sebolt, Ki-Tae Eom, Chang-Beom Eom, Alexander Sinitskii, Patrick R Irvin, Jeremy Levy Graphene nanoribbons (GNRs) have many interesting electronic properties [1] that can be tuned by chemical synthesis, which make them promising candidates for many quantum applications such as quantum information processing. LaAlO3/SrTiO3 (LAO/STO) interface offers a back-gate-switchable metal-insulator transition by either using conductive atomic force microscope lithography (c-AFM lithography) [2] or using ultra-low-voltage electron beam lithography (ULV-EBL) [3], which allows for the creation of reconfigurable nanostructures. Here we describe efforts to electronically couple GNRs to LAO/STO electron waveguides through nanoscale vias which are etched nano regions where LAO is removed. GNRs are directly placed in the nano-vias using an AFM-based technique [4], and electrical contact to the GNRs is achieved by c-AFM or ULV-EBL. |
Friday, March 18, 2022 12:42PM - 12:54PM |
Z68.00007: Reconfigurable graphene-based 2D quantum materials Dengyu Yang, Qingrui Cao, Muqing Yu, Ki-Tae Eom, Chang-Beom Eom, Patrick R Irvin, Benjamin M Hunt, Jeremy Levy Reprogrammable LaAlO3/SrTiO3-based nanostructures offer new approaches to the development of quantum materials. With the recently founded ability of ultra-low-voltage electron beam lithography (ULV-EBL), sub-10 nm resolution nanostructures can be patterned through boron nitride encapsulated graphene at the LaAlO3/SrTiO3 interface. This method enables the creation of doubly periodic electrostatic potentials to be applied to high-mobility graphene. Period structures like Kagome and Lieb lattice can be programmed without changing the underlying physical layers. This approach is part of a more general effort to create a solid state platform for quantum simulation in two dimensions. |
Friday, March 18, 2022 12:54PM - 1:06PM |
Z68.00008: Rapid, multianalyte detection of opioid metabolites in wastewater Michael Geiwitz Mass scale local monitoring of opioid use without directly testing an individual is highly desirable. This allows agencies to detect a problem while avoiding the stigma associated with direct testing. Nowadays, wastewater-based epidemiology (WBE) is getting a lot of attention for community tracing of drug metabolites as well monitoring the spread of infectious diseases. However, the presence of these metabolites in wastewater is very low in the range of pg/ml to ng/ml because of their excessive dilution in the wastewater samples which requires a highly sensitive detection technique. The current method to detect these drugs is high-pressure liquid chromatography tandem mass spectrometry (HPLC-MS) which is a highly selective and specific technique but suffers from lower sensitivity in wastewater, requires advanced equipment, sample analyses, and trained personnel. Herein we present a graphene based multiplexed platform utilizing high-specificity aptamers (ApG-FET) for rapid, sensitive, and simultaneous detection of drug metabolites in wastewater to accurately assess opioid misuse and abuse in municipal communities. I will discuss the fabrication process of the ApG-FET platform along with the challenges that arose during its creation and the solutions to these issues. Results of detection of opioid metabolites in wastewater will be presented. These results will highlight the selectivity and specificity of the platform as well as the limit of detection |
Friday, March 18, 2022 1:06PM - 1:18PM |
Z68.00009: Terahertz Graphene quantum dot and Black Phosphorus bolometers: An update. Abdelouahad El Fatimy, Paola Barbara, Petr Neugebauer, Ivan Nemec, oleh martiniuk, luke st marie, miroslav bartos, ikram zdeg, Vivek Chaudhary Graphene is an ideal material for broadband hot-electron bolometers Applications. We showed in our previous work that graphene nanostructured into quantum dots yields bolometers with extraordinary performance [1-4] and light detectors [5]. In this talk, we will present some new results on the effect of the gate on the temperature dependence of the resistance. We also discuss Black phosphorus/Graphene Heterostructure for Terahertz bolometric applications [6]. |
Friday, March 18, 2022 1:18PM - 1:30PM |
Z68.00010: Negative differential resistance with ultra-high peak-to-valley current ratio intunnel diodes based on two-dimensional cold metals: Vertical NbTe2/BN/NbTe2 heterojunction diode Ersoy Sasioglu, Ingrid Mertig The negative differential resistance (NDR) effect is of great interest for future memory and logic circuit applications. We propose a novel semiconductor-free NDR tunnel diode concept with ultra-high peak-to-valley current ratio (PVCR) [1]. Our proposed NDR diode consists of two cold metal (CM) electrodes separated by a thin insulating tunnel barrier. The NDR effect stems from the unique electronic band structure of the CM electrodes, i.e., the width of the isolated metallic bands around the Fermi level as well as the energy gaps separating higher and lower lying bands determine the current-voltage characteristics and PVCR value of the tunnel diode. By proper choice of the CM electrodes the PVCR values as high as 109 can be obtained. We employ the nonequilibrium Green's function method combined with density functional theory to demonstrate the NDR characteristics of the proposed diode based on two-dimensional CM NbTe2 and hexagonal BN (NbTe2/BN/NbTe2) vertical heterojunctions. |
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