Dependence on Voltage and Temperature for Spintronic Applications*

The coupled spin and valley Hall effect (SVHE) in monolayer transition metal dichalcogenides (TMDs) offers the opportunity to manipulate the spin and valley degree of freedom in these systems for spintronics. We applied magneto-optic Kerr effect (MOKE) with a 700 nm laser to directly measure the SVHE in monolayer tungsten diselenide (WSe₂) field effect transistors. Carrier-density-dependent and temperature-dependent reflectance spectra were measured, and the dielectric function dispersion was calculated to calibrate the MOKE data. We will show the SVHE MOKE signature is strongly dependent on the source-drain current, gate induced carrier density, and temperature, and that the signal can persist towards warmer temperatures, providing critical measurements needed to make use of the SVHE in devices.