Degradation Mechanisms of GaN HEMTs Terahertz Sources

Abstract: This paper summarizes the main failure modes and the physics behind capturing degradation mechanisms in GaN/AlGaN HEMT transistors. Trapping effect, hot electrons, short channel effects, and processing imperfections  cause device failure during operation conditions. The stability of Terahertz sources need to be proved to guarantee high-quality GaN devices in terahertz spectroscopy systems [1,2]. This review discusses terahertz emission based on Dyakonov-Shur instability to investigate possible device-induced degradation.

1] Yuki Tsuda, Tsuneyoshi Komori, Abdelouahad El Fatimy, Kouhei Horiike, Tetsuya Suemitsu, and Taiichi Otsuji, "Application of plasmon-resonant microchip emitters to broadband terahertz spectroscopic measurement," J. Opt. Soc. Am. B 26, A52-A57 (2009).

[2] Kiarash Ahi, "Review of GaN-based devices for terahertz operation," Opt. Eng. 56(9) 090901 (11 September 2017)