Bulletin of the American Physical Society
APS March Meeting 2022
Volume 67, Number 3
Monday–Friday, March 14–18, 2022; Chicago
Session Y36: Novel Spin Qubit Materials and Technologies IIFocus Recordings Available
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Sponsoring Units: DQI Chair: Daniil Lukin, Stanford Room: McCormick Place W-194A |
Friday, March 18, 2022 8:00AM - 8:12AM |
Y36.00001: Optical and Strain Stabilization of Point Defects in Silicon Carbide Jonathan R Dietz, Evelyn L Hu The photoluminescence and spin properties of ensembles of color centers in silicon carbide are enhanced by fabricating optically isolated slab waveguide structures and carefully controlling annealing and quenching conditions thereafter. We show that the photoluminescence signal of an ensemble of implanted defects is enhanced in slab waveguides by an order of magnitude over identically implanted bulk defects. We use the enhanced photoluminescence of several defect species to study recombination and diffusion in the presence of thermal annealing with both rapid cooling and a longer return to ambient conditions. The confined mechanical geometry of the thin film is exploited to measure the spin-strain coupling of the negatively charged silicon monovacancy. The methods in this work can be used to exercise greater control on near-surface emitters in silicon carbide and better understand and control the effects of strain on spin measurements of the color centers. |
Friday, March 18, 2022 8:12AM - 8:24AM |
Y36.00002: Cryogenic optical characterization of T center in ion-implanted silicon for spin-photon interface Wei Liu, Jiahui Huang, Murat C Sarihan, Jin Ho Kang, Baolai Liang, CheeWei Wong T center in Silicon (Si) is recently found to be one of the important platforms for telecom optical access quantum memory due to its competitive long Hana-echo electron spin coherent time (> ms) and reasonable short bound exciton lifetime (< µs). The established silicon-based manufacture in integrated electronics and photonics platforms leverage the potential application of such color centers for quantum network. In this study, we create T centers in the Boron doped float-zone (FZ) Si and Czochralski Si-on-insulator (CZ-SOI), respectively, by ion-implantation with C and H, followed by rapid thermal annealing (RTA) and boiling in the deionized water. We characterize the T center emission around 1325 nm at cryogenic temperature by using a confocal infrared micro-photoluminescence (PL). PL results reveal that the T center in CZ-SOI wafer has a larger linewidth than the bulk, which can be related to increased inhomogeneities induced by higher Oxygen concentration. We observe additional defect center luminescence around T center line, which can be associated as a precursor related to H populations and defect migrations. Such extra defect emission disappears as boiling the wafer at proper temperature, which promotes the T center formation. However, T center can be passivated entirely by excess H during the boiling process. We then perform Raman spectroscopy to study the local vibration mode of T center, a Raman shift at 1053.57 cm-1 is observed and associated with T centers. Eventually, we model the cavity quantum electrodynamics (cQED) of T center integrated with a L5 photonic crystal (PhC) cavities for cavity-enhanced spin-photon devices. An ensemble Rabi oscillation 50×15.9 GHz can be achieved, indicating the feasibility of coherent control via strong coupling. |
Friday, March 18, 2022 8:24AM - 8:36AM |
Y36.00003: Coherence Properties of Single Erbium Ions in CaWO4 Salim Ourari, Lukasz Dusanowski, Sebastian Horvath, Christopher Phenicie, Mehmet Tuna Uysal, Isaiah Gray, Paul Stevenson, Nathalie P de Leon, Jeff D Thompson Erbium ions in crystalline hosts, which have an optical transition at 1.5 μm, are promising as single photon sources and quantum memories for quantum repeater networks operating directly in the telecom-band. These ions can be incorporated into a wide range of host materials, which influence their spin and optical coherence properties through the concentration of other magnetic spins and the Er site symmetry, which can affect the sensitivity to electric field noise. In this work, we present a study of the spin and optical coherence properties of Er3+ implanted into CaWO4. CaWO4 is magnetically quiet, and Er substitutes for Ca on a non-polar symmetry site, where a permanent electric dipole moment is forbidden. Using heterogeneously integrated silicon photonic crystal cavities, we isolate single erbium ions, and probe their spin properties using optically detected magnetic resonance with single-shot spin readout. With this approach, we have studied sources of decoherence, and developed materials processing techniques and device architectures to improve ions performance. |
Friday, March 18, 2022 8:36AM - 9:12AM |
Y36.00004: Qubits made by advanced semiconductor manufacturing Invited Speaker: Anne-Marije J Zwerver Spin qubits that are hosted in electrically-controlled, silicon quantum dots are promising candidates for the implementation of quantum processors. To pave the road towards large-scale quantum computing, millions of high-yield, uniform qubits are required. For classical processors, these conditions are reached by using advanced manufacturing techniques such as optical lithography and chemical-mechanical polishing. Due to the resemblance to transistors, silicon spin qubits are often claimed to be able to leverage decades of technology development in the semiconductor industry. However, the methods used in industry fabrication lines are little flexible and more intrusive than the processes that are currently used for quantum dot fabrication. It is therefore an outstanding question whether these techniques allow for the fabrication of quantum dot structures and whether the industrial processing conditions that ensure high-yield transistor fabrication do not compromise qubit quality and coherence. |
Friday, March 18, 2022 9:12AM - 9:24AM |
Y36.00005: Coherent control of a single nuclear spin near an Er3+ ion Mehmet Tuna Uysal, Mouktik Raha, Songtao Chen, Christopher Phenicie, Salim Ourari, Slava Dobrovitski, Jeff D Thompson Single erbium ions in solid-state hosts are excellent candidates for quantum network applications due to their emission in the telecom band and compatibility with silicon photonics, while nuclear spins provide coherent resources for quantum information processing. In this work, we observe coherent coupling of an Er electronic spin (S=1/2) in a Y2SiO5 host crystal, and a nearby nuclear spin (I=1/2), with a measured gyromagnetic ratio equivalent to a proton. We utilize this interaction to construct a SWAP operation, measure the coherence properties of the nuclear spin, identify its location with respect to the Er ion and probe its environment. In particular, by performing spectroscopy on the nuclear spin, we find that it is coupled to a system consistent with two spin-1/2 nuclear spins. These results provide a pathway towards interacting spin ensembles, combining multiple long-lived quantum registers to a telecom-compatible quantum memory for future quantum repeater-based quantum network applications. |
Friday, March 18, 2022 9:24AM - 9:36AM |
Y36.00006: Nuclear Spin Wave Quantum Register for a Single Rare-Earth Ion Qubit Andrei Ruskuc, Chun-Ju Wu, Joonhee Choi, Jake Rochman, Andrei Faraon Optically addressable solid-state spins are a leading candidate to realise large-scale quantum networks. We explore single 171Yb ions in YVO4 coupled to nanophotonic cavities as a network node architecture. These ions exhibit excellent coherence properties enabled by first order insensitivity of optical and spin transitions to electric and magnetic field noise [1]. |
Friday, March 18, 2022 9:36AM - 9:48AM |
Y36.00007: GHZ State Generation using an Optically Addressable Single Rare-Earth Ion Qubit Chun-Ju Wu, Andrei Ruskuc, Joonhee Choi, Jake Rochman, Andrei Faraon Rare-earth ions doped into solid-state hosts are promising candidates for realizing quantum networks and studying quantum many-body dynamics. In particular, we have shown that single 171Yb ions in YVO4 have highly coherent optical and spin transitions, and the surrounding 51V lattice nuclear spins (I=7/2) can be used as a quantum memory register by utilizing collective excitations of the 51V spin ensemble. In this work, we further demonstrate that a highly entangled nuclear GHZ state can be efficiently generated via coherent interactions between the 171Yb qubit and neighboring lattice nuclear spins, opening up new opportunities in quantum metrology and quantum device benchmarking. Specifically, we develop a control sequence to simultaneously manipulate four 51V spins by driving a 171Yb qubit to realize a controlled rotation gate for GHZ state preparation. The homogeneous one-to-all coupling between the 171Yb ion and 51V spins enables the efficient generation of a nuclear GHZ state, leading to a four-times enhanced parity oscillation frequency. Furthermore, we characterize and discuss the nuclear spin initialization fidelity and the GHZ state coherence time. |
Friday, March 18, 2022 9:48AM - 10:00AM Withdrawn |
Y36.00008: Computational search of transition-metal-doped cyrstals for spin-light interfaces Christopher Dodson, Juan D Lizarazo Ferro, Rashid Zia Transition metal ions in semiconductors are one of the solid-state platforms currently being explored for quantum information science and technology applications, but given the millions of potential ion-host combinations, an experimental screening of all transition-metal-doped crystals would be prohibitive. To limit this plethora of possibilities, and to identify ion-host systems best suited to specific applications, this is a field that welcomes computational tools that integrate the many relevant physical characteristics of each ion-host combination, together with methods to estimate their spin and optical properties. |
Friday, March 18, 2022 10:00AM - 10:12AM |
Y36.00009: Hyperfine structure of transition metal defects in SiC Benedikt Tissot, Guido Burkard Transition metal (TM) defects in silicon carbide (SiC) are a promising platform in quantum technology, especially because some TM defects emit in one of the telecom bands. We develop a theory for the interaction of an active electron in the D shell of a TM defect in SiC with the TM nuclear spin and derive the effective hyperfine tensor within the Kramers doublets formed by the spin-orbit coupling. Based on our theory we discuss the possibility to exchange the nuclear and electron states with potential applications for nuclear spin manipulation and long-lived nuclear-spin based-quantum memories. |
Friday, March 18, 2022 10:12AM - 10:24AM |
Y36.00010: Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection Sven Rogge, Ian Berkman, Alexey Lyasota, Gabe De Boo, John G Bartholomew, Brett C Johnson, Jeff C McCallum, BinBin Xu, Shouyi Xie, Rose L Ahlefeldt, Matt J Sellars, Chunming Yin Silicon is an attractive material for photonics applications due to its large dielectric constant that enables compact devices at telecom wavelengths and the synergies with CMOS fabrication. However, due to the indirect bandgap Si is not ideal for emitters. This can be mitigated by the use of sites that possess optical transitions that are not linked to the silicon band structure. Here, we present the optical properties of a resonantly excited Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nano-fabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. We observed inhomogeneous broadening of less than 50 MHz and an upper bound on the homogeneous linewidth to below 1MHz, which is a reduction of more than an order of magnitude observed to date. In addition, two color excitation in magnetic field allowed us to assign crystal field levels and extract spin lifetimes. These narrow optical transition properties with long spin lifetimes show that Er in Si is an excellent candidate for future quantum information and communication applications. |
Friday, March 18, 2022 10:24AM - 10:36AM |
Y36.00011: All-optical single spin in silicon Daniel B Higginbottom, Alexander T Kurkjian, Camille Chartrand, Moein Kazemi, Evan R MacQuarrie, Nicholas A Brunelle, Camille Bowness, Adam DeAbreu, Leea A Stott, Sjoerd Roorda, Michael Thewalt, Stephanie Simmons Silicon is an ideal platform for commercial quantum technologies: it unites advanced photonics and the microelectronics industry, as well as hosting record-setting long-lived spin qubits. We have been exploring a class of silicon emitters, the silicon colour centres, that are silicon analogues of the diamond color centres (NV, SiV, GeV). One such emitter, the T centre, was recently discovered to combine long-coherence electronic and nuclear spins with narrow, telecommunications-band optical transitions in isotopically purified silicon. In this talk I present the fabrication of commercial-grade silicon T centre devices and identify single centres with photonically enhanced emission. These emitters are orders of magnitude brighter than previous silicon spin-photon centres and have promising linewidths for useful quantum devices. The qubit states of a single T centre-bound spin are prepared and measured in the first all-optical measurement of individual spins in silicon. Waveguide-coupled T centre devices producing spin-entangled photons could make immediate use of integrated silicon photonic networks boasting low-loss active components, efficient coupling to standard telecommunications fibres, and efficient photon detectors for a complete spin-photon network on chip. |
Friday, March 18, 2022 10:36AM - 10:48AM |
Y36.00012: Scaling Spin Coherence in Solid-state Defect Qubit Shun Kanai, Joseph F Heremans, Hosung Seo, Gary Wolfowicz, Christopher P Anderson, Sean E Sullivan, Mykyta Onizhuk, Giulia Galli, David D Awschalom, Hideo Ohno The electron spin coherence time T2 is one of the most critical material parameters for qubits. Here we show a scaling relationship of T2 of solid-state spin qubits on electron and nuclear spins’ parameters based on the cluster correlation expansion (CCE) calculations, constituting a new tool for the qubit material exploration [1,2]. We calculate T2 for a single nuclear species for all stable spinful species with various spin densities n, and find that the scaling relationship T2,i ~ n-1.0|g|-1.6I-1.1 for a dilute (< 1022 cm-3) spinful nuclear bath (g: g-factor of nuclear spin, I: quantum number of nuclear spin). We show the nuclear spin baths are decoupled under external magnetic fields typically encountered in experiments (> 30 mT), and the T2 of the compounds can be estimated by (ΣiT2,i-2)-0.5. These relationships enable one to predict T2 of the materials without extensive computations. |
Friday, March 18, 2022 10:48AM - 11:00AM |
Y36.00013: Extended coherence of electron and nuclear spins in epitaxial purified silicon devices fabricated by atomic lithography. Jonathan Reiner, Pascal Macha, Saiful Haque Misha, Yousun Chung, Christian Lehner, Daniel Keith, Ludwik Kranz, Samuel K Gorman, Yu-ling Hsueh, Brandur Thorgrimsson, Rajib Rahman, Joris G Keizer, Michelle Y Simmons The nuclear spin free environment in isotopically pure silicon dramatically supresses magnetic noise, giving rise to unprecedented coherence times of spin qubits [1]. Likewise, the single crystal environment provided by epitaxial growth exhibits extremely low level of charge noise, crucial for high performance of electrically controlled operations of a qubit in a nanoelectronic device [2]. We have recently realised precision donor qubits in isotopically pure crystalline silicon-28 and present our results to benchmark against charge and magnetic noise measurements in natural silicon, highlighting that they achieve the necessary coherence properties for quantum information processing. |
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