*

Kagome magnets are interesting due to the co-existence of Weyl points and spin frustration in these materials. The thin-film form of these materials is particularly desired for both fundamental research and practical application. Here we report the molecular beam epitaxy (MBE) growth of kagome magnet Fe₃Sn₂ on epitaxial Pt(111) buffer layer on Al₂O₃(0001) substrate. Using our unique atomic-layer MBE (AL-MBE) technique, we are able to grow these materials at a lower temperature, which reduces interdiffusion and generates a sharper interface. The structure of Fe₃Sn₂ is confirmed by a combination of reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and transmission electron microscopy (TEM), while the magnetic properties of Fe₃Sn₂ are demonstrated by magneto-optical Kerr effect (MOKE), SQUID magnetometry, and anomalous Nernst effect (ANE) imaging.