Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers*

While transition-metal dichalcogenide (TMD)–based moire materials have been shown to host various correlated electronic phenomena, topological states have not been experimentally observed until now. In this work, using first-principle calculations and continuum modeling, we reveal the displacement field–induced topological moire bands ´ in AB-stacked TMD heterobilayer MoTe2/WSe2. Valley-contrasting Chern bands with nontrivial spin texture are formed from interlayer hybridization between MoTe2 and WSe2 bands of nominally opposite spins. Our study establishes a recipe for creating topological bands in AB-stacked TMD bilayers in general, which provides a highly tunable platform for realizing quantum-spin Hall and interaction-induced quantum anomalous Hall effects.