) plus polyaniline composite.

Due to the molecular spin state switching, and the associated conductance change, the spin crossover system has potential in the development of nonvolatile memory devices but low 'on-state' resistance in spin crossover molecular films is essential for molecular memory applications  [1]. The current-voltage I(V) and capacitance-voltage C(V) characteristics of the spin crossover molecule [Fe(Htrz)₂(trz)](BF₄) (where Htrz = 1H-1,2,4-triazole) plus polyaniline were studied to explore the voltage-dependent transport properties and the drift charge carrier lifetimes have been determined. The transport measurements for [Fe(Htrz)₂(trz)](BF₄) plus polyaniline composite were performed for both the high spin state and the low spin state and the conductance of the high spin state and the low spin state were compared. Transistor characteristics of the [Fe(Htrz)₂(trz)](BF₄) plus polyaniline composite were also studied to better understand the behavior of the composite as an organic field effect transistor (OFET).

[1]  T. K. Ekanayaka et al., Magnetochemistry 7, (2021). DOI: 10.3390/magnetochemistry7030037