Anisotropy effect on the overall properties of Magnetic Tunnel Junction-Based Molecular Spintronics Device*

Fabrication of robust and mass-producible molecular spintronics devices at the nanoscale is a major concern. To overcome this issue, we have designed a magnetic tunnel junction-based molecular spintronics device (MTJMSD). MTJMSD enables the utilization of ferromagnetic electrodes with a wide range of magnetic anisotropies. We used Monte Carlo Simulation to explain the impact of anisotropies on the MTJMSD equilibrium properties. We also investigated theoretically how the nature of magnetic M-H changes as we apply the in-plane and out-of-plane anisotropies. The application of anisotropy creates multiple magnetic phases of opposite magnetic spins on the same FM electrode.  When in-plane and out-of-plane anisotropies are applied on an electrode simultaneously, the magnetic moment of the electrodes possessed its maximum value. The MTJMSD possessed its maximum value since the competing effect of anisotropies wiped out the multiple magnetic phases. we also investigated the effect of anisotropies on the nature of the M-H curves generated computationally. The effect of the in-plane anisotropy transformed the regular M-H of MTJMSD into a "wasp-waisted" -like M-H curve. The "wasp-waisted" -like M-H is hypothesized due to the presence of multiple magnetic phases present on the FM electrodes caused by strong magnetic anisotropy. The "wasp-waisted" nature of magnetic hysteresis was also observed experimentally below 200 K when the field is applied parallel to the plane of the MTJ.