magnetoelectric thin films*

Multi-functional thin films of boron (B) doped Cr₂O₃ exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of a magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype spin Hall magnetoresistance device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr₂O₃ film. Various characterization techniques support that voltage controlled, nonvolatile Néel vector rotation takes place at high-temperature in H = 0. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr₂O₃ a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications.