Effect of the external fields in high Chern number quantum anomalous Hall insulators*

Topological magnetic insulators have been discovered as a new platform for observing Quantum Anomalous Hall states with high Chern number C. In three-dimensional structures of stacking layers of magnetically doped and undoped topological insulators, the number of chiral edge channels can be controlled by the width and number of layers. More specifically, samples of Cr-doped Bi2(Se,Te) have been recently measured by Zhao et al. [1] in transport experiments showing this feature up to C = 5. 

In this work, we explore the possibilities of tuning the chiral channels of the aforementioned materials in the presence of electric fields and disorder. The external field affects the impact of the point-impurities in the transport simulations, showing important possibilities of tuning of the states. 

[1] Zhao, Y. F. et al. Tuning the Chern number in quantum anomalous Hall insulators. Nature 588, 419 (2020).