Bulletin of the American Physical Society
APS March Meeting 2022
Volume 67, Number 3
Monday–Friday, March 14–18, 2022; Chicago
Session S66: Functional Surfaces, Coatings and InterfacesRecordings Available
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Chair: Hao Zeng, SUNY Buffalo Room: Hyatt Regency Hotel -Grant Park D |
Thursday, March 17, 2022 8:00AM - 8:12AM |
S66.00001: Low Mechanical loss coatings for reduced thermal noise in gravitational wave detectors Gabriele Vajente, CARMEN S MENONI, Le Yang, Aaron Davenport, Mariana A Fazio, Alena Ananyeva, Liyuan Zhang, GariLynn Billingsley, Kiran Prasai, Ashot Markosyan, Riccardo Bassiri, Martin M Fejer, Martin Chicoine, François Schiettekatte The sensitivity of current gravitational wave interferometric detectors is limited by Brownian noise: thermal motion originating from the elastic energy dissipation in the dielectric coatings used in the interferometer mirrors. We have identified mixtures of titanium dioxide (TiO2) and germanium dioxide (GeO2) that allows an improvement of almost a factor of 2 on the level of Brownian noise with respect to the state-of-the-art materials, the largest reduction in almost two decades of research. We show that by using a mixture of 44% TiO2 and 56% GeO2 in the high refractive index layers of the interferometer mirrors, it would be possible to achieve a thermal noise level in line with the design requirements for future upgrades. These results are a crucial step forward to produce the mirrors needed to meet the thermal noise requirements for the planned upgrades of the Advanced LIGO (Laser Interferometer Gravitational-Wave Observatory) and Virgo detectors. |
Thursday, March 17, 2022 8:12AM - 8:24AM |
S66.00002: Development of amorphous silicon and amorphous silicon carbide thin-film coatings for gravitational wave detectors Ruinan Zhou, Manel Molina Ruiz, Gabriele Vajente, Alena Ananyeva, Thomas H Metcalf, Raymond C Robie, Xiao Liu, Ashot Markosyan, Riccardo Bassiri, Martin M Fejer, Frances Hellman Interferometer optics plays an important role in increasing the sensitivity of gravitational wave detectors (GWD). Finding ultra-low noise mirror coating materials with low optical and mechanical loss is a priority research topic. Tunneling two level states (TLS) are known to dominate the mechanical loss, whereas optical loss is related to local defects. For low temperature detectors, where longer wavelength lasers will likely be used, amorphous silicon (a-Si) and amorphous silicon carbide (a-SiC) are promising substitutes to the currently used high refractive index coating material due to their lower mechanical loss, which will improve the sensitivity of the present and future GWD. |
Thursday, March 17, 2022 8:24AM - 8:36AM |
S66.00003: Tailorable Near-Perfect Absorption in Ferrel Berreman Metasurfaces Utilizing The Thickness Dependent ENZ Characteristics Of Aluminum Doped Zinc Oxide and Titanium Nitride Mustafa G Ozlu, Soham S Saha, Sarah Nahar Chowdhury, Alexander V Kildishev, Alexandra Boltasseva, Richard D Schaller, Vladimir M Shalaev The tailorable optical properties of transition metal nitrides and transparent conducting oxides have raised them to be one of the top candidates in technologically relevant nanophotonic research. In this work, the thickness-dependent properties of thin layers of aluminum-doped zinc oxide(AZO) and titanium nitride(TiN) are investigated with a special interest in their epsilon near zero (ENZ) region. Lithography-free metasurfaces with bilayer stacks of TiN and AZO are shown to possess two highly absorptive modes with strong field enhancements. These absorption peaks are associated with the excitation of the radiative modes (Ferrel-Berreman mode) near the ENZ regions of AZO and TiN. The thickness tunable material properties of AZO provide an additional degree of freedom to engineer the spectral position of the resonance over a 200 nm wavelength range spanning the telecom regime. The metasurfaces show all-optical reflection modulation of 15% with picosecond temporal response. The thickness-dependent characteristics enable tailorability of optical devices like absorbers and modulators, while the high field enhancement near the ENZ regime induces strong light-matter interactions enabling nonlinear optical applications like time refraction studies, all optical switching, and high harmonic generation. |
Thursday, March 17, 2022 8:36AM - 8:48AM |
S66.00004: Substrate and Intermolecular Interactions Influence the Properties of Supported Polyoxometalate Spin Qubits Grant E Johnson Polyoxometalates (POMs) with localized spins have potential as molecular qubits for quantum computing. POMs may incorporate magnetic atoms such as V in their structures, producing novel molecules with promising electro/magneto-optical properties. Nevertheless, for eventual applications, molecular qubits need to be arranged in optically-addressable arrays which imposes unavoidable interactions with underlying supports and adjacent POMs. Specifically, spin-lattice coupling is an influential decoherence mechanism that remains insufficiently understood for supported molecular qubits. Herein, we synthesized W-based POMs with different numbers of V atoms and transferred them into the gas phase using electrospray ionization. Ion soft landing, a versatile surface modification technique, was used to deliver mass-selected POMs with predetermined V-composition to different self-assembled monolayer surfaces. Alkylthiol, hydrophobic perfluorinated alkylthiol, and hydrophilic carboxylic-acid terminated surfaces on gold were selected as well-defined model supports with which to characterize POM-substrate and POM-POM interactions. Infrared reflection absorption spectroscopy, scattering-type scanning near-field optical microscopy (s-SNOM), and density functional theoretical calculations provide insight into the properties of supported POMs, how they are influenced by V-doping, and how they are perturbed by interaction with the different supports. Spatially-resolved s-SNOM results reveal the VPOM distribution on the supports and the effect of surface coverage on the POM-SAM and POM-POM interactions. Our results provide fundamental insight into how substrate and intermolecular interactions influence the properties of supported molecular qubits, which is central to manipulating their coherence times for quantum computing applications. |
Thursday, March 17, 2022 8:48AM - 9:00AM |
S66.00005: Thickness dependent studies of ferroelectricity and crystal structure of CuInP2S6 Spencer Johnson, Chunli Tang, Hussam Mustafa, Peng Li, Jerzy T Sadowski, Xueyun Wang, Jiawang Hong Van der Waals material CuInP2S6 (CIPS) has attracted great attention due to its ferroelectricity at room temperature and the potential applications in data storage devices and photovoltaic effect. Its ferroelectricity is due to the off-center ordering in the Cu sublattice and the displacement of cations from the centrosymmetric positions in the In sublattice, therefore, the competition between the surface energy, depolarization field, and interfacial bonding in thin-film CIPS may lead to modification of ferroelectricity and crystal structure. However, the change of topography and interface condition in thin-film samples make it difficult to interpret the experimental results. In this work, we investigate the thickness dependence of ferroelectricity and crystal structure in CIPS using nonlinear optics and low-energy electron microscopy. Our results demonstrate a structural phase transition when the film thickness reaches below ~100 nm. |
Thursday, March 17, 2022 9:00AM - 9:12AM |
S66.00006: Boosting optical non-reciprocity at the surface Sushree S Dash, Miguel Levy The miniaturization of non-reciprocal devices for on-chip optical isolator integration calls for further technological development to increase efficiency over presently available products. Our previous study on Bi-substituted lutetium iron garnets showed that surface reconstruction resulted in significant changes in the density of states, leading to a significant enhancement in Faraday rotation. Subsequent studies via UV and visible optical, XPS, and magnetic circular dichroism have provided a deeper understanding of the role of the surface in electronic transitions responsible for the Faraday effect. These results will be presented at the conference and complementary density functional theory analysis, revealing significant changes in Fe and Bi densities of states at the surface. This study provides a valuable tool for improved materials technology towards the on-chip integration of non-reciprocal devices in optical circuits. |
Thursday, March 17, 2022 9:12AM - 9:24AM |
S66.00007: Effect of Cs and CsI on the low-index surfaces of W Leopoldo Diaz, Mahdi Sanati The adsorption of material adlayers has been used to tailor and change the properties of transition metal surfaces. Here, we investigate the effects of Cs and CsI adsorbates on the low-index surfaces of W. Using density functional theory (DFT), the formation energies, potential energies, and density of states were calculated for all surfaces. The adsorption of Cs resulted in a work function decrease of more than 1.90 eV for all surfaces with the following trend ΔΦ111 < ΔΦ100 < ΔΦ110. The decrease is due to an interplay between the bond strength (formation energy) and the z-component of the surface dipole layer formed as a result of the Cs adsorbate. The adsorption of CsI also resulted in a decrease in the work function but did not reveal the same relationship with the formation energy. The disagreement is due to the competition between the surface dipole layer components demonstrating the importance of the dipole orientation. These findings were used to increase the electron field emission (tunneling current) of W emitter arrays. |
Thursday, March 17, 2022 9:24AM - 9:36AM |
S66.00008: Moiré Pattern on 2M WS2 Thin Flakes with Different Polymorph Crystalline Phases William R Scougale, Piumi I Samarawickrama, Joseph McBride, Brian Leonard, John Ackerman, Jifa Tian, TeYu Chien The novel intrinsic topological superconductor 2M Phase Tungsten Disulfide (2M WS2) opens new opportunities for the confirmation of the Majorana Zero Mode (MZM) presence and behavior. The topologically protected MZM quantum state could overcome issues such as decoherence and noise in quantum computations. 2M WS2 has a high superconducting transition temperature of 8.8 K, providing an excellent material to explore the novel properties of the MZMs. To-date, most of the synthesis methods of 2M WS2 involve a de-intercalation process to induce the 2M phase. Multiple polymorph crystalline phases can be present in the materials. In this work, by using Scanning Tunneling Microscopy and spectroscopy (STM/S), we have observed unique Moiré Patterns formed between the 2M phase and a hexagonal phase. Additionally, we find an apparent crystalline phase mixing regime where the surface layer consists of the 2M and hexagonal phase intermixed in a quasi-periodic manner. |
Thursday, March 17, 2022 9:36AM - 9:48AM |
S66.00009: Optical Propeties of Mesopyrmids Gorown on Si[100] Nathan Dice Mesopyramids are interesting polyhedron structures produced by annealing in vacuo Au thin films on Si(100) substrates. Two kinds of pyramids are produced by annealing. For fast quenching, super surface polyhedron structures are produced, which are referred to as mesopyramids. With controlled cool down, subsurface polyhedron mesostructures are produced, that are referred to as anti-mesopyramids. Because of their composition and morphology, these structures are simultaneously a surface plasmon polariton material and an optical element. The later property produces near and far field interference phenomena in reflection. The mesopyramids have a unique surface morphology consisting of channels and plateaus that produce polarized reflected light. The far field diffraction patterns of the mesopyramids and anti-mesopyramids are well modeled by a square aperture emitter. However, because of their differences in curvature (positive of negative), the diffraction patterns are either magnified or miniaturized. These unique structures have potential to advance the development of metalense optics. |
Thursday, March 17, 2022 9:48AM - 10:00AM |
S66.00010: Arsine on germanium: a new route to donor-based quantum devices. Steven R Schofield, Neil J Curson, Emily V Hofman, Taylor J Stock, Wolfgang M Klesse, Oliver Warschkow, Rebecca Conybeare Efforts to construct atomic-scale donor-based quantum devices have largely focussed on positioning phosphorus donors in silicon using phosphine (PH3) as the molecular precursor. However, recently germanium has been the focus of much attention for the creation of semiconductor quantum devices due to advantages over silicon including higher electron mobility, stronger spin-orbit coupling, larger Bohr radius, and stronger Stark effect. In this talk we introduce arsine (AsH3) on the germanium (001) surface for the creation of atomic-scale donor-based quantum devices. We present atomic-resolution scanning tunnelling microscopy (STM) measurements combined with density functional theory (DFT) calculations. We discuss our results in the context of atomic-scale device fabrication using STM-based hydrogen resist lithography and emphasise the unique advantages of this system compared to phosphine on silicon. |
Thursday, March 17, 2022 10:00AM - 10:12AM |
S66.00011: Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on Silicon Carbide Jimmy C Kotsakidis, Marc Currie, Antonija Grubišić-Čabo, Anton Tadich, Rachael L Myers-Ward, Matthew DeJarld, Kevin M Daniels, Chang Liu, Mark T Edmonds, Amadeo L Vázquez de Parga, Michael S Fuhrer, D. Kurt Gaskill Magnesium intercalated ‘quasi-freestanding’ bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties - highly n-type doped (≈1014), relatively stable in ambient conditions (6 hours) and large bandgap (≈0.36 eV). However, the intercalation of Mg underneath graphene is challenging, requiring multiple intercalation steps. |
Thursday, March 17, 2022 10:12AM - 10:24AM |
S66.00012: Effect of electron confinement on the optical properties in transdimensional plasmonic TiN Deesha Shah, Morris Yang, Zhaxylyk Kudyshev, Vladimir M Shalaev, Igor V Bondarev, Alexandra Boltasseva Similar to 2D materials, plasmonic transdimensional materials (TDMs) - atomically thin metal films spanning a few atomic layers - are expected to exhibit strong dependences on structural parameters and high sensitivity to external optical and electrical perturbations. The small atomic thicknesses also lead to strongly confined surface plasmons and quantum phenomena. With all the promising properties of metallic TDMs, it has become increasingly necessary to understand the thickness dependent properties of atomically thin metals. In the current study, we characterize the evolution of the permittivity of passivated trandimensional TiN using spectroscopic ellipsometry. The influence of oxidation and thickness on the optical properties is decoupled by measuring passivated TiN. A decrease in the Drude plasma frequency is observed in thinner films because of spatial confinement. We explain the experimental trends of the plasma frequency using a nonlocal Drude dielectric response model theory based on the Keldysh-Rytova (KR) potential that predicts the thickness dependent optical properties of metal TDMs caused by electron confinement. Our experimental findings are consistent with the KR model, indicating quantum confinement induced optical properties in plasmonic transdimensional TiN. |
Thursday, March 17, 2022 10:24AM - 10:36AM |
S66.00013: Control of Nanofriction Response in Low-Dimensional Materials Antonio Cammarata, Tomas Polcar One of the main difficulties in the control of the nanoscale friction is represented by the complexity of non-equilibrium processes occurring in tribological contacts. |
Thursday, March 17, 2022 10:36AM - 10:48AM |
S66.00014: Resonant Energy Transfer in Type-II TMD Heterostructure Arka Karmakar, Abdullah Al-Mahboob, Christopher E Petoukhoff, Oksana Kravchyna, Nicholas S Chan, Takashi Taniguchi, Kenji Watanabe, Keshav M Dani In semiconductor heterostructures (HSs) competing interlayer processes such as charge (CT) and energy (ET) transfer compete with each other. Interlayer CT process can be stopped by placing a charge-blocking interlayer between the materials. However, the long-distance interlayer ET process is difficult to stop, unless the materials are placed far apart from each other. Which is not realistic for most of the device applications. Thus, understanding the ET process becomes absolute necessary to design any practical application. Type-II transition metal dichalcogenide (TMD) HSs are believed to be the building block of next generation optoelectronic applications. Earlier studies have found the presence of ET process in type-II HSs after placing a charge-blocking interlayer to completely suppress the CT process. In this work, we show that type-II HS formed between monolayers of Molybdenum Diselenide (MoSe2) and Rhenium Disulfide (ReS2), an efficient ET process takes place from ReS2 to MoSe2 layer without having any charge-blocking interlayer material, resulting 360% MoSe2 photoluminescence (PL) enhancement in the HS area. After successfully blocking the CT process by inserting hexagonal Boron Nitride (hBN) layers, more than one order of magnitude higher MoSe2 PL emission was achieved from the HS area as compared to the MoSe2 area alone. We calculated the ET efficiency due to the bright exciton to be ~70%. We further prove that this ET process was truly resonant in nature by replacing the MoSe2 layer with Tungsten Diselenide (WSe2), where despite forming a similar type-II HS, WSe2 PL emission was severely quenched in the HS area due to the efficient CT process. This work gives a unique opportunity to simultaneously study the interlayer ET and CT processes in type-II TMD HSs at ultrafast timescale in future works. |
Thursday, March 17, 2022 10:48AM - 11:00AM |
S66.00015: Probing optoelectronic properties of graphene/black phosphorous/graphene heterostructures Vivek Chaudhary, Salma Lahbabi, Omar Mounkachi, Abdelouahad El Fatimy The devices relying on heterostructures of various two-dimensional (2D) semiconductors have been proven to be potential candidates in many modern technologies. The recently emerged narrow gap 2D layered material named black phosphorous (BP) has demonstrated several intriguing optical and electronic properties. Analogous to other 2D materials, BP also features the tunable bandgap depending on layer number but differs in the band structure, i.e., it always has a direct band structure. The high carrier mobility and direct bandgap of BP make it a promising material to be exploited in broadband electromagnetic radiation (i.e., from visible to THz) sensing. However, the large contact resistance with metals limits its application as an efficient sensing device. Herein, we propose an optical (IR) sensor based on graphene/black phosphorous/graphene heterostructure where graphene act as a charge collection layer. Also, such kinds of heterostructures may pave the way to enhance the technological limits of novel sensing and imaging devices. |
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