High mobilities and exotic anisotropic magnetoresistivity in the Ir3Ge7 structure family of compounds*

We synthesized via an indium flux method a single crystal Pd₃In₇ compound that belongs to the cubic Ir₃Ge₇ structure type and we explore its interesting topological behavior. This family of compounds has shown to be a promising candidate to explore the result of a complex Dirac-like electronic structure close to the Fermi level. In the case of Pd₃In₇, the electronic structure displays multiple band crossings close or on the Fermi energy ε_F, leading to Dirac type-I and type-II nodes. The analysis of the quantum oscillations due to the de Haas van Alphen effect (dHvA effect) indicates light effective masses of the order of 0.15m_e and very high carrier mobilities, 3000 cm²/V*s, consistent with what is expected from a Dirac material. Notably, the magnetoresistance shows a strong anisotropic behavior as a function of position, even though during the whole rotation the magnetic field is always perpendicular to the direction of the current, leading to a maximum Lorentz force.