Colossal angular magnetoresistance in a ferrimagnetic nodal-line semiconductor Mn3Si2Te6

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APS March Meeting 2022

Volume 67, Number 3

Monday–Friday, March 14–18, 2022; Chicago

Session N72: Mn-Te Magnetic Topology IV

11:30 AM–2:30 PM, Wednesday, March 16, 2022
Room: Hyatt Regency Hotel -Jackson Park D

Sponsoring Units: DMP GMAG DCMP
Chair: Seong Joon Lim, Rutgers; Liqin Ke, Ames Lab

Abstract: N72.00014 : Colossal angular magnetoresistance in a ferrimagnetic nodal-line semiconductor Mn₃Si₂Te₆

2:06 PM–2:18 PM

Abstract

Presenter:

Junho Seo
(Institute for Basic Science; Pohang University of Science and Technology)

Authors:

Junho Seo
(Institute for Basic Science; Pohang University of Science and Technology)

CHANDAN DE
(Pohang University of Science and Technology)

Hyunsoo Ha
(Seoul National University)

Ji Eun Lee
(Yonsei University)

Sungyu Park
(Institute for Basic Science)

Joonbum Park
(Helmholtz-Zentrum Dresden-Rossendorf)

Yurii Skourski
(Helmholtz-Zentrum Dresden-Rossendorf)

Eun Sang Choi
(National High Magnetic Field Laboratory)

Bongjae Kim
(Kunsan National University)

Gil Young Cho
(Pohang University of Science and Technology)

Han Woong Yeom
(Pohang University of Science and Technology)

Sang-Wook Cheong
(Rutgers University, New Brunswick)

Jae Hoon Kim
(Yonsei University)

Bohm-Jung Yang
(Seoul Natl Univ)

Kyoo Kim
(Korea Atomic Energy Research Institute)

Jun Sung Kim
(Pohang University of Science and Technology)

Topological magnets, where both magnetism and nontrivial band topology coexist, have emerged as promising candidates to realize novel electronic and spintronic functionalities, because their topological band degeneracy can be readily tuned by spin configurations, thus dramatically modulating electronic conduction. Here we propose a new class of topological magnets, namely, magnetic nodal-line semiconductors, in which spin-polarized conduction or valence bands possess topological nodal-line degeneracy. Taking a layered ferrimagnet Mn₃Si₂Te₆ as a model system, we show that the topological band degeneracy, driven by chiral molecular orbital states, is lifted depending on the spin orientation, which leads to a metal-insulator transition in the same ferrimagnetic phase. As a result, we have observed extremely large angular magnetoresistance exceeding a trillion percent per radian, which we call colossal angular magnetoresistance. Our findings highlight that magnetic nodal-line semiconductors are a promising platform for realizing extremely sensitive spin- or orbital-dependent functionalities.

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Bulletin of the American Physical Society

APS March Meeting 2022

Volume 67, Number 3

Monday–Friday, March 14–18, 2022; Chicago

Session N72: Mn-Te Magnetic Topology IV

Abstract: N72.00014 : Colossal angular magnetoresistance in a ferrimagnetic nodal-line semiconductor Mn3Si2Te6

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Authors:

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Abstract: N72.00014 : Colossal angular magnetoresistance in a ferrimagnetic nodal-line semiconductor Mn₃Si₂Te₆