Film

Strain engineering for the heteroepitaxy film is a technique to improve the ferroelectric properties or create a novel ground state. The symmetry and misfit lattice constant of substrates strongly affect feasible materials and physical properties of the epitaxial heterostructures. So far, prevalent perovskite oxide substrates, such as cubic SrTiO₃ and orthorhombic R(Al/Sc/Lu)O₃ (R = rare earth), have been prominently employed. Recently, we have successfully grown a new perovskite oxide single crystal and synthesized epitaxial BaTiO₃ film on the lab-made substrate. In this talk, we will present the physical properties of the square tensile strained BaTiO₃ film and discuss the square tensile strain effect on BaTiO₃ based on the density functional theory calculations.