Effect of strain on electronic states, phonon modes and electron-phonon scattering in GaSb*

Gallium Antimonide (GaSb) is a low-bandgap compound semiconductor with applications in optoelectronic devices. It can be grown as high quality, wafer scale substrates with a lattice matched closely to a wide range of ternary and quarternary III-V compounds with applications in the infrared spectrum. These devices operate with hot carriers generated by optical pumping or high bias. A detailed understanding of the carrier-phonon scattering throughout the entire Brillouin zone is needed for accurate modes of lasing devices and transistors based on these materials, including the dependence of band structure and phonon mode of strain inherent to epitaxial growth. We use first principles to address these points, by looking in detail at the key quantities required in self-consistent transport models. Among the results, we notice a change in the location of the conduction minimum at a certain value of strain. Effect on the phonon dispersion will be discussed and finally the overall effect on the electron-phonon coupling would be presented.