FET*

Defects are known to have a significant impact on the electrical properties of semiconducting two-dimensional (2D) transition metal dichalcogenides such as molybdenum disulfide (MoS₂). To understand this impact, it is crucial to establish a direct correlation between the electrical properties and local defect structures in MoS₂. Here, we have designed a MoS₂ field-effect transistor (FET) device that is compatible with high-resolution transmission electron microscopy (TEM) studies. In this MoS₂ FET device, graphite is used as electrodes and 2D hBN as the insulating substrate. We then transfer the stack onto a protochip TEM substrate for structural studies and in-situ electrical response measurement. We create defects such as triangular-shaped antidots in the MoS₂ FET device by annealing the MoS₂ in H₂/Ar environment. We then study how antidots with different edge structures affect the electrical properties of MoS₂.