Bulletin of the American Physical Society
APS March Meeting 2022
Volume 67, Number 3
Monday–Friday, March 14–18, 2022; Chicago
Session K67: Quantum Emitters and Spin DevicesRecordings Available
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Sponsoring Units: DMP Chair: Shannon Harvey, Stanford University; Xiangzhi Li Room: Hyatt Regency Hotel -Hyde Park |
Tuesday, March 15, 2022 3:00PM - 3:12PM |
K67.00001: Single-Photon Emitters in Silicon Nitride forScalable Quantum Photonics Alexander Senichev, Zachariah O Martin, Samuel Peana, Demid Sychev, Xiaohui Xu, Omer Yesilyurt, Alexei S Lagutchev, Alexandra Boltasseva, Vladimir M Shalaev In this work, we demonstrated the generation of intrinsic single-photon emitters in SiN material via novel growth and annealing processes. Specifically, we have grown the SiN films by high-density plasma chemical vapor deposition under growth conditions providing a low auto-fluorescence SiN, while the subsequent rapid thermal annealing resulted in the generation of single-photon emitters. We investigated the material, structural, optical, and quantum properties of such emitters. They were found to be bright, stable, linearly polarized, and high-purity sources of single photons at room temperature. The utilization of quantum emitters natively embedded in SiN has the potential to mitigate the typical low coupling efficiency of emission into photonic components common in hybrid systems. Monolithically embedded emitters also avoid the difficulty of scaling fabrication of hybrid integrated platforms for industrial-scale quantum applications. We also studied the integration of SiN quantum emitters with on-chip photonic circuitry to explore the potential for these new sources for quantum communication, quantum photonic computational algorithms, and quantum simulation. We fabricated SiN waveguides with integrated emitters coupled off-chip with grating couplers. We characterized the structure by performing photon intensity correlation measurements of emitters coupled to waveguides. The antibunched emission from a waveguide-coupled emitter has been successfully measured. The improvement of the SiN emitter-waveguide system requires further studies of the interplay between growth conditions, auto-fluorescence, and refractive index of SiN. |
Tuesday, March 15, 2022 3:12PM - 3:24PM |
K67.00002: AWG-Driven High-Frequency Optically Detected Magnetic Resonance for NV Quantum Sensing Cooper M Selco, Cooper M Selco, Benjamin M Fortman, Yuhang Ren, Susumu Takahashi High-fidelity of quantum control of spin states is paramount for magnetic resonance spectroscopy and quantum sensing. Pulse shaping is promising to improve the fidelity of spin state manipulation. However, the application of pulse shaping to high-frequency ESR and related techniques is still limited due to technical challenges. |
Tuesday, March 15, 2022 3:24PM - 3:36PM |
K67.00003: Application of adiabatic passage in NV-detected ESR and NMR Yuhang Ren, Benjamin M Fortman, Zihan Zhao, Yuxiao Hang, Susumu Takahashi Precise control of a quantum system is a key in various fields. Adiabatic passage is a robust and efficient method for producing complete population transfer between two states of a quantum system. Although the duration of conventional adiabatic passage control is long and often hampered by quantum decoherence, the evolution can be accelerated significantly, so-called shortcuts to adiabaticity (STA). |
Tuesday, March 15, 2022 3:36PM - 3:48PM |
K67.00004: Excited-state spin-resonance spectroscopy of VB- defects in hexagonal boron nitride Nikhil Mathur, Arunabh Mukherjee, Xingyu Gao, Jialun Luo, Brendan A McCullian, Tongcang Li, Nick Vamivakas, Gregory D Fuchs Recently discovered spin-active boron vacancy (VB-) defect centers in hexagonal boron nitride (hBN) have high contrast optically-detected magnetic resonance (ODMR) at room temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. In this talk, we present results using magnetic field-dependent spectroscopy to probe and manipulate spin within the orbital excited-state of VB- defects in hBN. Our experiments determine the excited-state spin Hamiltonian, including the temperature-dependent zero-field splitting parameters and the Landé g-factor. We confirm that the resonance is associated with spin rotation in the excited-state by carrying out pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-states. Our observation of a single excited-state spin resonance from 10 K to 300 K is consistent with a single accessible orbital state spin-triplet, which has consequences for understanding the symmetry of this point defect. Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising new avenues for quantum sensing. |
Tuesday, March 15, 2022 3:48PM - 4:00PM |
K67.00005: Purcell-enhanced emission from artificial atoms in silicon Carlos Errando Herranz, Connor Gerlach, Lorenzo De Santis, Christopher Panuski, Mihika Prabhu, Hamza H Raniwala, Ian Christen, Dirk Englund A central challenge for optical quantum technologies is strong light-matter interaction in the form of cavity-coupled artificial atoms. However, traditional approaches use unconventional material platforms, which has led to a bottleneck in the scaling of quantum technologies. Artificial atoms in silicon have the potential to combine the long coherence times of quantum memories in diamond with the scalability of silicon semiconductor technologies and the technological maturity of the optical telecommunication bands. Here we show, for the first time, artificial atoms in silicon coupled to on-chip cavities. We generated carbon-related artificial atoms (G-centres) in commercial silicon-on-insulator photonic chips and characterized their emission in the telecommunication O-band. We used a commercial foundry to fabricate optimized 2D photonic crystal cavities in this material, and demonstrate quality factors up to 30,000 with mode volumes below 1 (λ/n)3. We demonstrate Purcell-enhanced photon emission in this system by combining spectroscopy with excited-state lifetime measurements. |
Tuesday, March 15, 2022 4:00PM - 4:12PM |
K67.00006: Towards atomic-scale readout of acceptor cluster states in p-doped silicon. Taras Chutora, Max Yuan, Christopher Leon, Roshan Achal, Jeremiah Croshaw, Furkan M Altincicek, Lucian Livadaru, Jason Pitters, Robert A Wolkow Acceptor dopants in Si along with dangling bonds are enabling technologies for atomic-scale charge and spin-based qubit devices.[1] Additionally, recent advances in hydrogen lithography have enabled the patterning of quantum dot based circuit elements with atomic precision.[2] We engineered a boron cluster coupled to a dangling bond wire on highly doped p-type H-Si(100) and characterized its electronic properties with scanning tunneling microscopy. dI/dV mapping reveals in-gap dopant hole states and features reminiscent of charging rings.[3] The coupled entity behaves like a conductive wire from which dopant hole states can be accessed and has a complex dependence on wire length. The ability to externally probe dopant acceptor states could potentially be used for readout and control of the qubit spin states. |
Tuesday, March 15, 2022 4:12PM - 4:24PM |
K67.00007: Identification of a telecom wavelength single photon emitter in silicon Péter Udvarhelyi, Bálint Somogyi, Gergő Thiering, Adam Gali The G photoluminescence center in silicon emits single photons in the telecommunication O band and ODMR was demonstrated in its metastable triplet state. These properties make it a promising candidate as spin-photon interface for quantum networks. In this study, we determine the exact microscopic structure of the defect by calculating its magneto-optical properties. We describe a rotational motion of the interstitial silicon atom in the defect. We explain the observed fine structure of the ZPL with the rotational tunneling splitting and its isotope shift with the change in the zero-point energy of the rotation. We describe rotational and thermally activated averaging to axial symmetry in the defect properties compared to the measurement frequency. Our in-depth characterization is a key step in the optical control of the qubit state and reveals an interesting physics coupling multiple degrees of freedom of the defect. |
Tuesday, March 15, 2022 4:24PM - 4:36PM |
K67.00008: High-coherence integrated nanophotonic multi-spin-photon interface based on silicon vacancies in silicon carbide Florian Kaiser, Charles Babin, Rainer Stöhr, Naoya Morioka, Tobias Linkewitz, Timo Steidl, Raphael Wörnle, Di Liu, Erik Hesselmeier, Vadim Vorobyov, Andrej Denisenko, Mario Hentschel, Christian Gobert, Patrick Berwian, Georgy V Astakhov, Wolfgang Knolle, Sridhar Majety, Pranta Saha, Marina Radulaski, Nguyen Tien Son, Jawad Ul Hassan, J. Wrachtrup Optically active solid-state spins showed multi-node quantum networks, quantum error correction and entanglement distillation. |
Tuesday, March 15, 2022 4:36PM - 4:48PM |
K67.00009: Theory of substitutional carbon defects in hexagonal boron nitride Adam Gali, Anton Pershin, Song Li, Philipp Auburger, Gergő Thiering, Péter Udvarhelyi Carbon is a frequent contaminant of 2D hexagonal boron nitride (hBN), which is responsible for various magnetic- and optical-features of the material. In this contribution, we investigate the role of substitutional carbon defects in the development of color centers in hBN. We show that a neutral substitutional carbon defect at the B-site (CB) is responsible for the single spin ODMR center, known as D1 center. We also provide an overview of the properties of CB-CN donor-acceptor pairs (DAP). Here, we explain how a large Coulomb binding energy in the ground-state enables to tune the emission wavelength from deep-UV to NIR by increasing the distance between DAPs. Finally, we examine the properties of seventeen larger carbon clusters. Here, we show that even the extended chain-like arrangements still can exhibit low formation energies due to the development of energetically-favorable carbon-carbon bonds. Among those, we have identified a 6C ring as the most stable defect configuration and propose it as an alternative model for the famous 4.1-eV single photon emitter in hBN. |
Tuesday, March 15, 2022 4:48PM - 5:00PM |
K67.00010: First Principle Characterization of the T-center - a Single Spin Quantum Emitter in Silicon Oscar E Bulancea Lindvall, Rohit Babar, Viktor Ivády, Rickard Armiento, Igor A Abrikosov Silicon is one of the most established materials in modern electronics and integrated circuits, with mature technology for the construction of integrated photonics. Though, it has received less attention as a host of color centers, mainly due to its relatively small bandgap making deep centers emitting near telecom range less likely. However, recently, studies on radiation damage centers have found that the interstitial carbon and hydrogen cluster, called the T-center, not only emits in the telecom O-band, but also retains an optically addressable electron and nuclear spin with considerable coherence times[1]. The implications for future silicon-based quantum devices warrant a thorough investigation of the physics of this defect. This talk will present a first-principles characterization of the T-center in silicon. We examine the electronic structure of the defect, including its optical and spin properties in addition to stability and vibrational properties of the emitter ground state, and discuss this in the light of the recent experimental developments. |
Tuesday, March 15, 2022 5:00PM - 5:12PM Withdrawn |
K67.00011: Effects of various dopants on the phase change characteristics of Sb2Te3: first principles investigation Hyeong-Ryul Kim, Young-Kyun Kwon Among phase change materials based on Ge, Sb, and Te, Sb2Te3 (ST) has been paid attention to due to its faster operation speed and lower power consumption than Ge2Sb2Te5. However, its poor stability prevents its application to commercial memory devices. As a solution to resolve such poor stability issue while maintaining its advantages, various doping conditions has been proposed that would provide significant improvement in phase change characteristics including enhanced thermal stability and lowered operation energy. Using first-principles density functional calculations, we investigate the effects of several dopants such as Ti, C, and Se on the phase change properties of ST. First, we identify preferred sites of dopants in ST by evaluating and comparing their formation energies. Then we explore the modification of bonding characters of ST due to dopants to understand the roles of dopants in the enhancement of the phase change characteristics. Our study suggests that Sb2Te3 under certain doping conditions would have sufficient potential for practical phase-change memory devices with high stability and fast operation speed |
Tuesday, March 15, 2022 5:12PM - 5:24PM |
K67.00012: First principle study on optical properties of defects in two-dimensional materials Sunho Park, Seungjun Lee, Mina Yoon, Young-Kyun Kwon Two-dimensional (2D) materials with direct bandgaps have drawn a lot of attention due to their great potential for use in future optoelectronics. However, since 2D materials are quite susceptible to defects, we need to identify possible defect structures created and to understand the effects of such defects on their optoelectronic properties. It is expected that these defects will play crucial roles in optical properties, as spatially localized electron transitions occur through the mid-gap states induced by them, leading to the single-photon emission. In this study, we carry out ab initio calculations based on density functional theory to investigate the structural and electronic properties of various defects in hexagonal boron nitride and WSe2, as prototypical 2D systems. We explore the stability of various defects by evaluating their formation energies as a function of different parameters including chemical potentials, charge states, and temperature, which can be adjusted by an external electric field or an electron beam under experimental conditions. We further solve the Bethe–Salpeter equation with the GW approximation to study their optical absorption spectra and compare them with the results of their defect-less pristine counterparts to extract the defect effects. |
Tuesday, March 15, 2022 5:24PM - 5:36PM |
K67.00013: On the effects of impurities and defects on GaAs-based photovoltaics Thales Borrely, Ahmad Alzeidan, Alain A Quivy, Gabriel M Jacobsen, Marcio D Teodoro, Raja Sekhar Reddy Gajjela, Arthur L Hendriks, Paul M Koenraad In the field of photovoltaics, GaAs is one of the most studied materials not only for its convenient properties—namely, high absorption coefficient and high mobility—but also because it is a useful framework for the development of new technologies. A notorious example is the InAs/GaAs Stranski-Krastanov-quantum-dot solar cell (SKQD-SC), an instance of intermediate band solar cells. Despite numerous efforts, highly efficient InAs/GaAs SKQD-SCs have not yet been demonstrated due to the difficulties involved in achieving the Fermi-level splitting between the quantum dot levels and the conduction and valence bands, which results in substantial (> 15%) open-circuit voltage degradation (Voc). The absence of Fermi-level splitting is partially explained by the presence of recombination centers localized at the interface between SKQDs and their surrounding matrix. In this presentation, we will show that quantum dots grown by the submonolayer (SML) technique lead to a much smaller Voc degradation (< 5%) when compared to SKQDs as a consequence of the lower density of defects resulting from the planar growth technique. The quality and growth parameters of the SMLQDs will be discussed by means of photoluminescence and cross-sectional scanning tunneling microscopy results. |
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