Radio Frequency Reflectometry on Si:P Quantum Devices

Si:P monolayer quantum devices fabricated using STM based hydrogen lithography are a strong candidate for spin-based quantum computing.  Scaling these devices to larger numbers of spin-based donor qubits is impeded by the amount of physical space required for the readout sensors. Radio frequency reflectometry addresses these issues by minimizing the physical footprint of the sensor, while potentially reducing the sensitivity to noise as the measurement can operate at a higher frequency than DC readout. This presentation will discuss our progress in developing a gate-based and ohmic RF reflectometry technique that is capable of single shot-readout and compare reflectometry results with typical DC based measurements. We will describe our optimization for this technique and the use of impedance matching in order to increase measurement sensitivity.