Characterization of Novel Ferromagnetic Topological Insulator - Antiferromagnetic Insulator Thin Film Heterostructures*

Magnetic topological insulators (TIs) in proximity with antiferromagnetic (AFM) insulators have the potential of exhibiting new emergent behavior as a result of the exchange interaction at the interface, including interface magnetic exchange effects, strong spin - orbit coupling bulk electronic transport, and novel topological surface state electronic transport. Here we report on the proximity effects of Mn doped Bi₂Te₃ system, a ferromagnetic TI with a Curie temperature of ~ 16 K, with a series of MF₂ (M = transition metal) AFM ionic crystals. This work will demonstrate how these thin film heterostructures can be grown with high crystal quality via molecular beam epitaxy and discuss their magnetic and electronic properties, including possible meergent behaviors that arise from their interface interactions.