Monday, March 14, 2022
3:00PM - 3:36PM
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D67.00001: First-principles calculations of point defects and impurities in nitride semiconductors
Invited Speaker:
Darshana Wickramaratne
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Monday, March 14, 2022
3:36PM - 3:48PM
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D67.00002: Modeling of color tunable light-emitting diodes with Eu-doped GaN active layers
Hayley J Austin, Brandon Mitchell, Jun Tatebayashi, Yasufumi Fujiwara, Volkmar G Dierolf
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Monday, March 14, 2022
3:48PM - 4:00PM
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D67.00003: Deterministic creation of optically active defects in AlN towards integrated single photon emitters
Heejun Byeon, Michael D Titze, Jacob D Henshaw, Deanna M Campbell, Peter A Schultz, George T Wang, Edward Bielejec, Michael P Lilly, Andrew M Mounce
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Monday, March 14, 2022
4:00PM - 4:12PM
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D67.00004: Optical Amplification from Er Optical Center in GaN in the Visible region
Jiarong R Cui, Ho X Vinh, Ngoc L.H. Hoang, Aidan Lentz, Nusrat Jahan, Vinh Q Nguyen
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Monday, March 14, 2022
4:12PM - 4:24PM
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D67.00005: Understanding radiative emissions in the vicinity of selected-area regrown GaN diodes
Sam Frisone, Alexander Chang, Sizhen Wang, Bingjun Li, Rachel S Goldman, Lincoln J Lauhon, Jung Han
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Monday, March 14, 2022
4:24PM - 4:36PM
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D67.00006: Temperature Dependence of Spectral Emission from GaN Defect Quantum Emitters
Yifei Geng, Jialun Luo, Len H van Deurzen, Debdeep Jena, Gregory D Fuchs, Farhan Rana
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Monday, March 14, 2022
4:36PM - 4:48PM
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D67.00007: Understanding the zincblende to wurtzite polytype transition during epitaxy of gallium nitride nanowires
Abby Liu, Hongling Lu, Rachel S Goldman
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Monday, March 14, 2022
4:48PM - 5:00PM
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D67.00008: A first principles study of n-doping of cubic boron nitride with carbon
Cyrille Armel Sayou Ngomsi, Pratibha Dev
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Monday, March 14, 2022
5:00PM - 5:12PM
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D67.00009: The Effect of Lattice Relaxation on Nitrogen Incorporation in GaAsN(Bi) Alloys
Albert Tsui, Timothy Jen, Rachel S Goldman, Liang Qi
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Monday, March 14, 2022
5:12PM - 5:24PM
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D67.00010: Inversion Domain Boundaries in Wurzite GaN
Mohamed Mauroof F Umar, Jorge O Sofo
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Monday, March 14, 2022
5:24PM - 5:36PM
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D67.00011: Recovery mechanism of reverse leakage current in GaN HEMTs following thermal storage test
Jayjit Mukherjee, Rupesh K Chaubey, Dipendra S Rawal, Rajendra S Dhaka
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