Bulletin of the American Physical Society
APS March Meeting 2022
Volume 67, Number 3
Monday–Friday, March 14–18, 2022; Chicago
Session B72: 2D Quantum Materials
11:30 AM–2:18 PM,
Monday, March 14, 2022
Room: Hyatt Regency Hotel -Jackson Park D
Sponsoring
Unit:
DMP
Chair: Junho Choi, Los Alamos National Lab
Abstract: B72.00002 : Gate-controlled quantum dots in monolayer WSe2*
12:06 PM–12:18 PM
Presenter:
Justin Boddison-Chouinard
(University of Ottawa)
Authors:
Justin Boddison-Chouinard
(University of Ottawa)
Alexander M Bogan
(National Research Council of Canada)
Norman Fong
(National Research Council of Canada)
Pedro J Barrios
(National Research Council of Canada)
Jean Lapointe
(National Research Council of Canada)
Kenji Watanabe
(Research Center for Functional Materials, National Institute for Materials Science)
Takashi Taniguchi
(International Center for Materials Nanoarchitectonics, National Institute for Materials Science)
Adina A Luican-Mayer
(University of Ottawa)
Louis Gaudreau
(National Research Council of Canada)
In this talk, we present the fabrication of a fully encapsulated monolayer tungsten diselenide (WSe2) based device in which we realize gate-controlled hole quantum dots. We demonstrate how our device architecture allows us to identify and control the quantum dots formed in the local minima of electrostatic potential fluctuations in the WSe2 using gates. Coulomb blockade peaks and diamonds are observed which allow us to extract information about the dot diameter and its charging energy. Furthermore, we demonstrate how the transport passing through the channel formed by two gates is sensitive to the occupation of a nearby quantum dot. Additionally, we show how this channel can be tuned to be in the charge detection or the Coulomb blockade regime. Finally, we present a new device architecture which exhibits quantized conductance plateaus over a channel length of 600 nm at a temperature of 4 K. Quantized conductance over such a long channel provides an opportunity to incorporate gate defined quantum dot circuits without the nuisance of inhomogeneity within the channel.
*The authors acknowledge funding from the National Sciences and Engineering Research Council (NSERC) Discovery Grant RGPIN-2016-06717. We also acknowledge the support of the Natural Sciences and Engineering Research Council of Canada (NSERC) through Strategic Project STPGP-521420. This work was supported by the High Throughput and Secure Networks Challenge Program at the National Research Council of Canada.
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