Se Thin Films*

Materials with memristor properties are of much current interest because of their applications in neuromorphic circuitry and resistive switching devices. In these applications, low leakage current and high on-to-off current ratios are essential for efficient devices.  Non-stoichiometric copper selenide is a promising material that exhibits the above behavior, where the resistive switching is believed to be attributed to the ionic conductivity of copper ions [1]. We will present the memory resistive behavior of epitaxially grown Cu_2-xSe on Al₂O₃ using Molecular Beam Epitaxy (MBE).  The films were characterized using Reflection High Energy Electron Diffraction (RHEED), X-Ray Diffraction (XRD), and Atomic Force Microscopy (AFM). Pt interdigitated contacts were used to perform current-voltage (I-V) measurements. The (I-V) measurements showed resistive switching of  Cu_2-xSe at room temperature with over five orders of magnitude of on-off current ratios.

 

1. 1. Rehman at el. Appl. Phys.  50 (2017) 135301 (8pp)