Two-qubit logic gates with qubits made by advanced semiconductor manufacturing

Silicon spin qubits offer a promising platform for building a scalable quantum processor owing to their compatibility with advanced semiconductor manufacturing [1]. Intel has pioneered the fabrication of SiMOS and Si/SiGe quantum dot devices on an all-optical, 300mm process line, and has successfully produced qubits [2,3]. However, the ability to perform two-qubit logic gates on these industrial devices, which is a key requirement for a multi-qubit processor, has yet to be achieved. In this talk, we report the demonstration of two-qubit gates on Si/SiGe quantum dot devices made with 300mm EUV technology. The spin qubit consists of a single electron contained in a quantum dot. Single-qubit gates are performed via EDSR, with nearby micromagnets providing the necessary artificial spin-orbit coupling as well as the qubit frequency separation. Rapid voltage pulses are applied to control the exchange coupling between two qubits, allowing us to realize various types of two-qubit gates. We detail progress on optimizing control pulses to improve the quality of our two-qubit gates and determining the limiting factor for the gate fidelity.

[1] Vandersypen et al., npj Quant. Inf. (2017)

[2] Zwerver et al., arXiv:2101.12650 (2021)

[3] Pillarisetty et al., IEDM (2021)