Numerical Study of the Extended Fermi-Hubbard Model Simulated in a Lattice of Quantum Dots*

The extended Fermi-Hubbard model has recently been realized in an artificial lattice of dopant-based quantum dots in silicon [1]. It is shown that parameters such as the nearest-neighbor hopping amplitude and local as well as long-range interactions can be effectively tuned using controlled placement of dopant atoms with atomic-scale precision. Access to low temperatures, the permanent nature of array systems, and the availability of measurement tools in a condensed matter setting make them an exciting new class of engineered artificial lattices to simulate Fermi-Hubbard models. In this talk, I will discuss the numerical results for charge stability diagrams and low-temperature transport properties of 3x3 arrays used to verify the experimental observation of the finite-size analogue of a Mott insulating to metallic transition.