Coherent electrical control of an electron-nuclear flip-flop qubit in silicon

Donors in silicon provide a well-established platform for highly coherent spin qubits. Operated as individual electron or nuclear spin qubits, coherent control requires oscillating magnetic fields which are challenging to generate locally and result in slow qubit drive. Encoding quantum information in the combined anti-parallel electron-nuclear flip-flop states instead, allows for electrical control as the hyperfine interaction becomes susceptible to electric fields when displacing the electron away from the donor nucleus. Contrary to magnetic fields, local electric fields can be generated straightforwardly by leveraging existing gate electrodes. Here, we present coherent electric control of an implanted Phosphorus flip-flop qubit via hyperfine-modulated electric dipole spin resonance (EDSR). The electric drive leads to a Rabi frequency of up to 117.7 kHz, 5 times faster than traditional nuclear magnetic resonance techniques. We discuss coherence times and benchmark the control fidelities of the flip-flop qubit. The electric drive mechanism is applicable to both, top-down and bottom-up donor devices, and in combination with nuclear electric resonance offers a pathway to all-electrical control in donor-based quantum processors.