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Metallic transition metal dichalcogenides (TMDs) exhibit a rich variety of electronic phases. One of the factor influencing these phases is the presence of the substrate, as it triggers "proximity effects" on the 2D material such as screening, charge transfer, hybridization, strain, etc. In this work, we provide a comparative assessment of the impact of different substrates on the CDW and SC phases as well as the electronic structure of a model correlated 2D material. In particular, we study the electronic ground state of  high-quality SL-NbSe2 grown by molecular beam epitaxy (MBE) on four substrates-BLG/SiC(0001), SL-h-BN/Ir(111), Au(111) and bulk WSe2. By combining low-temperature (340 mK)  scanning tunneling microscopy/spectroscopy (STM/STS) and angle-resolved photoemission spectroscopy (ARPES), we compare their respective electronic structure.