films*

Strain-engineered, phase-pure, epitaxial, and stoichiometric La-doped SrSnO₃ films were grown using hybrid molecular beam epitaxy on LaAlO₃ (001) and GdScO₃ (110) substrates. High room-temperature electron mobility of 61 cm²V^-1s^-1 was achieved on GdScO₃ at a carrier concentration of 7×10¹⁹ cm^-3, with still room for improved with proper control over structure and doping. Through systematic study of temperature-dependent electronic and magneto-transport behavior, we will show that substrate-induced dislocations can have a strong influence on the electron phase coherence length resulting in a dimensionality crossover from 2D to 3D weak localization. We will then demonstrate that growth-induced cation non-stoichiometry results in a crossover from weak to strong localization of electronic carriers in La-doped SrSnO₃ films on LaAlO₃. Finally, we will discuss the correlations between electronic transport mechanisms and structural defects associated with cation non-stoichiometry and dislocations.