Scanning tunneling spectroscopy of tungsten disulfide*

Atomically thin layers of tungsten disulfide possess interesting optoelectronic properties characterized by strong photoluminescence. Here we perform scanning tunneling microscopy and spectroscopy measurements of 2H WS$_{2}$ on silicon oxide substrates to understand how electronic properties are affected by defects and substrate-induced disorder. Specifically, the electronic property of tungsten disulfide is probed as a function of gate-induced carrier density.