Quantum Hall Effect in Black Phosphorus/hBN Heterostructures

Black phosphorus field effect transistors have emerged as a new two-dimensional electron system (2DES) with high mobility. We achieved high mobilities by placing black phosphorus thin flakes on atomically flat hBN substrates. The mobility is further improved by placing a graphite back gate very close to the 2DES, which screens charged impurities. In this talk, we will present our observation of the integer quantum Hall effect in high mobility black phosphorus 2DEG. Temperature and angular dependent measurements reveal a wealth of information on the charge carriers in this new 2DES.