In Search of New Spintronic Devices Using the Modular Approach*

There has been enormous progress in the last two decades, effectively combining spintronics and magnetics into a powerful force that is shaping the field of memory devices. At the same time, new materials and phenomena continue to be discovered at a very fast pace, providing an ever-increasing set of building blocks that could be exploited in designing functional devices of the future. \newline \newline Through careful benchmarking against available theory and experiment we recently established a set of ``elemental'' circuit modules representing a diverse range of materials and phenomena [1], which are continually updated [2]. We will first show how these elemental modules can be integrated seamlessly to model both spintronic transport and nanomagnetic dynamics, starting from basic spin-valves and extending to complex experimental structures. \newline \newline We will then show how this framework can be used to design transistor-like spintronic devices to provide novel functionality compared to a standard complementary metal oxide semiconductor (CMOS) device. This approach allows us to incorporate the detailed physics of diverse sophisticated phenomena accurately into detailed circuit-level simulations to provide reliable estimates for the switching energy and delay of carefully designed devices. \newline \newline [1] K.Camsari et al., Scientific Reports, 5, 10571 (2015) \newline [2] https://nanohub.org/groups/spintronics