High quality exchange rotations in spin qubits using symmetric gating*

We present results on a singlet-triplet qubit implemented in a GaAs/AlGaAs heterostructure and we show that exchange oscillations can be realized either by tilting the double well potential, the conventional method, or by symmetrically lowering the barrier, as originally suggested by Loss and DiVincenzo. The two methods are compared here. We find that lowering the barrier between dots has much less relative exchange noise compared to tilting the potential. Since exchange rotations are sensitive to electrical noise and relatively insensitive to nuclear noise, this yields significantly enhanced free induction decay times and quality factors. Our results are comparable to those reported recently in silicon quantum dot devices, obtained using similar techniques.