Bulletin of the American Physical Society
APS March Meeting 2014
Volume 59, Number 1
Monday–Friday, March 3–7, 2014; Denver, Colorado
Session Q50: Photonic Structures and Semiconductor Lasers |
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Sponsoring Units: DCMP Room: Mile High Ballroom 1D |
Wednesday, March 5, 2014 2:30PM - 2:42PM |
Q50.00001: Colloidal structures of magnetite particles for electrically tunable photonic crystal/glass device Beom-Jin Yoon, Seung Taek Oh, Haenyung Lee, Young-Seok Kim, Gi-Ra Yi Here we report colloidal structures of magnetite particles designed for electrically tunable photonic crystal/glass devices. The color of reflected light from the photonic crystal/glass was tuned by applied electric field and electrophoretic behaviors of the particles. Colloidal dispersion of magnetite particles in polar and non-polar solvent was prepared. The ordered photonic structures were induced by applied electric field. Photonic band gap, the origin of reflected colors, was modulated by the electric field. The three primary colors (red, green, and blue) of display device were successfully presented and tuned by electric field even if the colloidal dispersion didn't show structural coloration without applied field. Peak position of the reflected color, purity of the color, and operating voltage were determined by particle size and surface charge of magnetite particles. The electrophoretic behavior and optical properties of magnetite particles were quantitatively studied, and the principle of color tuning in photonic crystal/glass devices was investigated. [Preview Abstract] |
Wednesday, March 5, 2014 2:42PM - 2:54PM |
Q50.00002: Photonic band structures of periodic arrays of pores in a metallic host: tight-binding beyond the quasistatic approximation Kwangmoo Kim, David Stroud We have calculated the photonic band structures of metallic inverse opals and of periodic linear chains of spherical pores in a metallic host, below a plasma frequency $\omega_{\mathrm{p}}$. In both cases, we use a tight-binding approximation, assuming a Drude dielectric function for the metallic component, but without making the quasistatic approximation. The tight-binding modes are linear combinations of the single-cavity transverse magnetic (TM) modes. For the inverse-opal structures, the lowest modes are analogous to those constructed from the three degenerate atomic $p$-states in fcc crystals. For the linear chains, in the limit of small spheres compared to a wavelength, the results bear some qualitative resemblance to the dispersion relation for metal spheres in an insulating host, as calculated by Brongersma {\it et al.}\ [Phys.\ Rev.\ B \textbf{62}, R16356 (2000)]. Because the electromagnetic fields of these modes decay exponentially in the metal, there are no radiative losses, in contrast to the case of arrays of metallic spheres in air. We suggest that this tight-binding approach to photonic band structures of such metallic inverse materials may be a useful approach for studying photonic crystals containing metallic components. [Preview Abstract] |
Wednesday, March 5, 2014 2:54PM - 3:06PM |
Q50.00003: Transmission properties of a Fibonacci quasi-crystals containing single-negative materials and their usage as multi-channel filters Ali Charkhesht, Hamid Pashaei Adl, Samad Roshan Entezar One of the interesting phenomena appearing in Fibonacci quasi-crystals is wave localization, so that the field becomes spatially confined in some suitable regions, or delocalized in some other parts. Many theoretical works have been written on this interesting subject. The periodic Fibonacci structure properties lead to a transmission spectrum that exhibits some band gap, and it is possible to control these band gaps by the generation number of this structures. All these properties make Fibonacci quasi-crystals materials very attractive from an optical point of view. Accordingly, the transmission properties of Fibonacci quasi-crystals containing single-negative materials are investigated with the transfer matrix method. It is shown that the periodic structures created by repeating the Fibonacci quasi-crystal generations, have some omnidirectional band gaps at the single-negative frequency region.~~Moreover, it is shown these band gaps depends on the number of Fibonacci photonic crystal unit cell. In other words, when generation number of Fibonacci photonic crystal unit cell increases, some sub band gaps appears within this omnidirectional band gap. In this work by using Fibonacci quasi-periodic structures we demonstrate that by increasing Generation Number of Unit cell, some omnidirectional sub-gaps will appear which can be used as a multichannel filter. [Preview Abstract] |
Wednesday, March 5, 2014 3:06PM - 3:18PM |
Q50.00004: 3D Photonic Crystals from a Forest of ZnO Nano-Pillars Donald Priour The band gap and dispersion curves are obtained for photonic crystals made up of square or hexagonal arrays of ZnO nano-pillars with a periodic modulation of the refractive index along the axis of the pillars. The wavelength of the intra-pillar index of refraction variation and the unit cell of the pillar lattice are in the optical range, on the order of 500 nm. The photonic dispersion curves are calculated with a treatment analogous to the nearly free electron model used in electronic band structure calculations; we expand in terms of wave functions compatible with the symmetry of the Brillouin Zone and thereby avoid discretizing the nano-pillar geometries. We validate our results by comparison with band structures obtained by alternative techniques for special lattice geometries. To examine the effect on salient features of the band structure, and to maximize the band gap, we vary parameters such as the pillar radius, the pillar lattice unit cell size, and the wavelength and amplitude of the intrapillar refraction index modulations. While on the one hand we consider an idealized forest comprised of infinitely tall pillars, we also examine finite pillars, the situation to be studied in experiment. [Preview Abstract] |
Wednesday, March 5, 2014 3:18PM - 3:30PM |
Q50.00005: The relationship between surface impedance and bulk band topological phases and interface state formation in one-dimensional systems Meng Xiao, Zhao-Qing Zhang, C.T. Chan Surface impedance is an important concept in photonic systems such as photonic crystals (PCs) For example, the condition of an interface state formation in the interfacial region of two different PCs is simply $Z_{SL} +Z_{SR} =0$, where $Z_{SL} \left( {Z_{SR} } \right)$ is the surface impedance of the semi-infinite PC on the left- (right-) hand side of the interface. We show a rigorous relation between the surface impedance of a one-dimensional PC and its bulk properties through the geometrical phases of the bulk bands. The existence of an interface state in a particular band gap can be determined by the Zak phases of the two PCs. Our results provide new insights on the relationship between surface properties and the bulk properties and the formation of interface states. [Preview Abstract] |
Wednesday, March 5, 2014 3:30PM - 3:42PM |
Q50.00006: Plasmon Polariton Modes in High Index Dielectric Structures Kyle Hoke, Kodiak Murphy, Brad Johnson, Janelle Leger The need to interface optical signals with increasingly small electronic components has led to an interest in subwavelength waveguides. Surface plasmon polaritons (SPPs) are longitudinal surface charge density oscillations localized to a metal/dielectric interface, and as such are capable of confining energy in a structure which is not diffraction limited. Waveguides based on the excitation of SPPs are promising for short-range applications, but in these structures Ohmic damping significantly limits propagation length due to the bulk of the electric field propagating along a metal interface. Here we demonstrate that through selection of materials with specific optical properties, Ohmic damping can be drastically reduced. Specifically, high index dielectric plasmon polariton modes (HID-PPMs) are surface-constructed waves that exist in structures having a core dielectric layer with a higher refractive index than the substrate supporting them. Modes in this region exhibit oscillatory electric fields with the bulk of their electric field confined in the dielectric layer, similar to a total internal reflection waveguide. Damping and insertion losses may therefore be drastically reduced in such structures. Here we report the demonstrationof HID-PPMs in Au/TiO2/Au MIM devices using attenuated total reflectance measurements. Characterization of these modes was performed for several devices of differing core dielectric thickness. Results are in good agreement with theory. We will discuss the application of these waveguides to several technologies related to solar energy conversion. [Preview Abstract] |
Wednesday, March 5, 2014 3:42PM - 3:54PM |
Q50.00007: Electromagnetic Heat Transfer in Artificial Materials Lilia Woods, David Drosdoff, Anh Phan Electromagnetic energy exchange has found promising new opportunities by greatly enhancing the heat transfer between bodies via radiation in the near-field regime. The greatest heat transfer occurs when the bodies support surface plasmons or polaritons that share the same resonant frequency. It has been shown, however, that 2-D materials such as graphene can have their surface plasmons tuned by modifying the chemical potential and temperature. This allows for tuning its resonance with other systems. In this talk, we investigated the electromagnetic radiation in metamaterials characterized by a strong magnetic response. We study theoretically Pendry-like and magnetically active metamaterial/graphene composites. The possibility for enhancing or inhibiting the heat transfer via the graphene properties is investigated. [Preview Abstract] |
Wednesday, March 5, 2014 3:54PM - 4:06PM |
Q50.00008: Defect-Free nanoscale printing using the Talbot effect Mario Marconi, Wei Li, Victor Martinez Esquiroz, Lukasz Urbanski, Dinesh Patel, Carmen Menoni, Aaron Stein, Weilun Chao, Erik Anderson An Extreme Ultraviolet (EUV) lithography technique that utilizes a compact EUV laser to print nanoscale features on a photoresist is presented. The lithographic method uses the Talbot effect and is based on the self-imaging produced when a periodic transmission mask is illuminated with a coherent light beam. A periodic mask composed of an array of tiles with an arbitrary design produces self images that are used to replicate the mask in the surface of a photoresist. When illuminated with coherent light, the tiled diffractive mask produces images which are 1$\times$ replicas at certain locations (Talbot planes). The self-images are generated by the diffraction of the thousands of cells in the mask. Thus, any defect in any of the unitary cells is averaged over a very large numbers of tiles consequently rendering a virtually defect-free image. This is a unique characteristic of this photolithographic approach. [Preview Abstract] |
Wednesday, March 5, 2014 4:06PM - 4:18PM |
Q50.00009: The effect of capping chemistry on GaSb Quantum Dot shape and photoluminescence Matt DeJarld, Erwin Smakman, Marta Luengo-Kovac, Andrew Martin, Vanessa Sih, Paul Koenraad, Joanna Millunchick GaSb quantum dots are known to disintegrate upon capping with GaAs, leading to an increase Sb incorporation into the wetting layer. Preventing Sb diffusion from the quantum dot could improve the retention of the dot shape and reduce wetting layer thickness. To test this theory, the quantum dots were capped with four different capping layers: 50nm of GaAs, 1 monolayer (ML) of AlAs with 50nm of GaAs, 3ML of AlAs with 50nm of GaAs, and 20nm of Al$_{0.5}$Ga$_{0.5}$As with 30nm of GaAs. A clear improvement in the retention of the shape was observed in the Al-containing caps. In this case, at least 70{\%} of the dots retained their shape and had an average height of 4.5nm, compared to only 45{\%} retaining their shape and having a height of 3nm for the GaAs-capped samples. However, the strain induced by the larger dots caused stacking faults to form. Photolumiescence shows that the wetting layer peak shifted towards higher energies in Al containing samples, consistent with a reduction in wetting layer thickness. The dot peak was at approximately the same position in all four samples, perhaps due to the fact that the defects present near the larger dots made them optically inactive. [Preview Abstract] |
Wednesday, March 5, 2014 4:18PM - 4:30PM |
Q50.00010: Secondary instabilities of transverse patterns in a coherent microcavity polariton fluid M.H. Luk, C.Y. Tsang, P. Lewandowski, Y.C. Tse, N.H. Kwong, A. Luecke, P.T. Leung, R. Binder, S. Schumacher Formation of Turing patterns in interacting coherent polariton fluids has recently been studied theoretically and demonstrated experimentally in semiconductor quantum well microcavities. These patterns originate from modulational instabilities driven by inter-polariton scatterings, leading to translational and rotational symmetry breakings in the laser-pumped polariton field. Competitions among hexagonal and stripe patterns under various conditions have been studied. However, further investigations show that under certain conditions, these simple patterns may be transient and, over time, could undergo secondary instabilities, collapsing or evolving into more complicated states. We will discuss these secondary instabilities of hexagonal and stripe patterns using linear stability analysis and numerical simulations. Furthermore we will discuss optical feedback/filter schemes to stabilize some naturally unstable patterns. [Preview Abstract] |
Wednesday, March 5, 2014 4:30PM - 4:42PM |
Q50.00011: Controlling Turing Patterns in Spinor Polariton Fluids in Semiconductor Microcavities K.P. Chan, P. Lewandowski, V. Ardizzone, Y.C. Tse, N.H. Kwong, M.H. Luk, A. Luecke, M. Abbarchi, E. Baudin, E. Galopin, J. Bloch, A. Lemaitre, P.T. Leung, Ph. Roussignol, R. Binder, J. Tignon, S. Schumacher The formation of Turing patterns in a coherent quantum fluid of polaritons has been achieved by pumping a quantum well placed inside a double-microcavity with a normally incident laser beam. With an external weak control beam or other asymmetries introduced in the system, the Turing patterns could be switched. On the other hand, recent experiments show that the orientation and polarization of the patterns can also be controlled by the polarization of the incident pump. This introduces the pump polarization as a new control, which originates from the spinor nature of the polariton fluid.We will present our theoretical studies on the polarization control mechanisms using numerical simulations and analytic simplified models. In particular, we examine how various spin-dependent physical factors, including inter-polariton interactions, polariton dispersion and photon-exciton coupling strengths,control the polarization and orientation of the pattern as observed in the recent experiment. [Preview Abstract] |
Wednesday, March 5, 2014 4:42PM - 4:54PM |
Q50.00012: Polariton Laser in a Wire-Like Microcavity Based on a Sub-Wavelength Grating Bo Zhang, Seonghoon Kim, Zhaorong Wang, Sebastian Brodbeck, Christian Schneider, Martin Kamp, Sven Hoefling, Hui Deng We report exciton-polariton lasing in a wire-like GaAs microcavity. The microcavity is sandwiched between a high-index-contrast sub-wavelength grating as the top mirror and a distributed Bragg reflector as the bottom mirror. The grating has dimensions 7.5 microns by 30 microns. The photoluminescence spectrum in momentum space shows discrete levels along the more tightly confined direction and quasi-continuous dispersion along the orthogonal direction. Unlike in the zero dimensional devices where polariton lases at ground state, in the wire-like device we observe lasing at a state that emerges between first and second lowest energy bands. [Preview Abstract] |
Wednesday, March 5, 2014 4:54PM - 5:06PM |
Q50.00013: Multi-Color Nanowire Photonic Crystal Laser Pixels Jeremy Wright, Sheng Liu, George Wang, Qiming Li, Alexander Benz, Daniel Koleske, Ping Lu, Huiwen Xu, Luke Lester, Ting Luk, Igal Brener, Ganapathi Subramania Emerging applications such as solid-state lighting and display technologies require micro-scale vertically emitting lasers with controllable distinct lasing wavelengths and broad wavelength tunability arranged in desired geometrical patterns to form ``super-pixels.'' Conventional edge-emitting lasers and current surface-emitting lasers do not produce a viable solution as they require abrupt changes in semiconductor bandgaps or cavity length. Here, we successfully address these challenges by introducing a new paradigm that extends the laser tuning range additively by employing multiple monolithically grown gain sections each with a different emission center wavelength. Using broad gain-bandwidth III-nitride multiple quantum well (MQW) heterostructures and a novel top-down nanowire photonic crystal nanofabrication we obtain single-mode lasing in the blue-violet spectral region(Sci.Rep,\textbf{3},2982(2013)). This has a remarkable 60 nm of tuning (or 16{\%} of the nominal centre wavelength) that is determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum. [Preview Abstract] |
Wednesday, March 5, 2014 5:06PM - 5:18PM |
Q50.00014: Electrically pumped near-ultraviolet lasing from ZnO Nanowire Based Heterojunctions Richard Mu, Haiyang Xu, Yichun Liu ZnO with a band gap (3.37 eV) and an exciton binding energy (60 meV) is a promising material for ultraviolet (UV) light-emitting diodes (LEDs) and low-threshold lasing diodes. Much progress has been made recently to enhance band edge emission of ZnO nanowire (NW) structure through surface passivation and local surface plasmon enahncement with metal nanparticles. Efforts have been made to fabricate electrically pumped near-ultraviolet lasing devices with metal/insulator/semiconductor laser diode based on ZnO/MgO core/shell nanowires with and without metal nanoparticle presences. The nanowire diode shows higher emission intensity at relatively low operating current density compared with the planar device. The improved efficiency is attributed to enhanced exciton oscillator strength and superior carrier transport properties of single-crystalline ZnO nanowires, and effective surface passivation by MgO coating. Random laser action was confirmed by the calculation of quality factor and the real-time changes of lasing spectra. The results reveal that the MgO coating serves as electron blocking, hole supplying and surface passivation layer for the nanowire heterostructure. Other approaches will also be presented and discussed in the presentation. [Preview Abstract] |
Wednesday, March 5, 2014 5:18PM - 5:30PM |
Q50.00015: Plasmonic and Photonic Lasers Based on Semiconductor Nanowires: Low-loss and High Mode-tunablity Qihua Xiong, Qing Zhang, Xinfeng Liu, Tzechien Sum Understanding the optical gain and mode-selection mechanisms in semiconductor nanowire (NW) based photonic and plasmonic laser is key to the development of high-performance nanoscale oscillators/amplifiers/lasers. Modification of semiconductor band structure through electric field modulation, or alloying semiconductors has so far gained limited success in achieving output mode tunability of the NW laser due to the considerable optical losses. Herein we demonstrate a new optical self-feedback mechanism based on the intrinsic self-absorption of the gain media and plasmonic enhanced Burstein--Moss effect to achieve low-loss photonic and plasmonic lasing with a high degree of mode selectivity (over 30 nm). Moreover, we demonstrate the first room-temperature ultra-violet ($\sim$ 370 nm) plasmonic nanolaser with an extremely-low-threshold ($\sim$ 3.5 MW/cm$^{2})$. A closed-contact planar semiconductor-insulator-metal interface greatly lessens the extrinsic cavity loss, and efficiently promotes the exciton-plasmon energy transfer thus furnishes adequate optical gain to compensate the loss. Our straightforward approaches are widely applicable in most semiconductor NW plasmonic/photonic cavities. [Preview Abstract] |
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