Bulletin of the American Physical Society
APS March Meeting 2014
Volume 59, Number 1
Monday–Friday, March 3–7, 2014; Denver, Colorado
Session W50: Focus Session: Mesoscopic Materials and Devices III
2:30 PM–5:30 PM,
Thursday, March 6, 2014
Room: Mile High Ballroom 1D
Sponsoring
Unit:
DMP
Chair: Ivan Schuller, University of California, San Diego
Abstract ID: BAPS.2014.MAR.W50.2
Abstract: W50.00002 : Tuning the gate efficiency in epitaxially grown InGaAs-InAs heterostructures*
3:06 PM–3:18 PM
Preview Abstract Abstract
Authors:
C.J. Palmstr{\O}m
(Department of Electrical and Computer Engineering, UC Santa Barbara)
J. Shabani
(California NanoSystems Institute, UC Santa Barbara)
*A portion of this work was performed at the National High Magnetic Field Laboratory, which is supported by NSF Cooperative Agreement No. DMR-1157490, the State of Florida, and the U.S. DOE.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2014.MAR.W50.2
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