Monday, March 3, 2014
2:30PM - 2:42PM
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D51.00001: High-Performance n-type and p-type WSe$_{2}$ Field Effect Transistors with Ionic-Liquid Gated Graphene Electrodes
Hsun Jen Chuang, Xuebin Tan, Mark Ming-Cheng Cheng, Nirmal Jeevi Ghimire, Jiaqiang Yan, David Mandrus, Bhim Chamlagain, Meeghage Madusanka Perera, Zhixian Zhou
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Monday, March 3, 2014
2:42PM - 2:54PM
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D51.00002: Contacts and transport characteristics of few-layer transition metal dichalcogenides
Junjie Wang, Jing Li, Jacob Shevrin, An Nguyen, Tom Mallouk, J. Zhu, Daniel Rhodes, Luis Balicas, K. Watanabe, T. Taniguchi
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Monday, March 3, 2014
2:54PM - 3:06PM
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D51.00003: Effect of interfaces on electron transport properties of MoS2--Au Contacts
Maral Aminpour, Prokop Hapala, Duy Le, Pavel Jelinek, Talat S. Rahman
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Monday, March 3, 2014
3:06PM - 3:42PM
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D51.00004: to be determined by you
Invited Speaker:
Ali Javey
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Monday, March 3, 2014
3:42PM - 3:54PM
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D51.00005: Vertical Field-Effect Transistor Based on Graphene-Transition Metal Dichalcogenides Heterostructures
Jatinder Kumar, Hui-Chun Chien, Matthew Z. Bellus, David L. Sicilian, Davis St. Aubin, Hsin-Ying Chiu
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Monday, March 3, 2014
3:54PM - 4:06PM
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D51.00006: High performance MoS$_{2}$ Field-Effect Transitors in a simple design
S. Velez, O. Txoperena, L. Pietrobon, F. Casanova, L.E. Hueso
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Monday, March 3, 2014
4:06PM - 4:18PM
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D51.00007: MoS$_{2}$ Field-effect Transistors with Graphene/Metal Hetero-contacts
Yuchen Du, Lingming Yang, Jingyun Zhang, Nathan Conrad, Han Liu, Peide Ye
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Monday, March 3, 2014
4:18PM - 4:30PM
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D51.00008: Electrical transport measurements on monolayer and few-layer MoSe2 and WSe2
Zaiyao Fei, Joe Finney, Yun Ling, Serkan Kasirga, Xiaodong Xu, David Cobden
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Monday, March 3, 2014
4:30PM - 4:42PM
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D51.00009: Improved Carrier Mobility in Few-Layer MoS$_{2}$ Field-Effect Transistors with Ionic-Liquid Gating
Meeghage Perera, Ming-Wei Lin, Hsun-Jen Chuang, Bhim Chamlagain, Chongyu Wang, Xuebin Tan, Mark Cheng, David Tom\'anek, Zhixian Zhou
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Monday, March 3, 2014
4:42PM - 4:54PM
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D51.00010: Electronic properties of few-layer MoS2 under an external electrical field
Jose Eduardo Padilha, Hartwin Peelaers, Anderson Janotti, Chris G. Van de Walle
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Monday, March 3, 2014
4:54PM - 5:06PM
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D51.00011: Photocurrent studies on multi-walled WS$_{2}$ nanotube devices
John Mathew, Gobinath Jegannathan, Sameer Grover, Sudipta Dubey, Pratiksha Dongare, Mandar Deshmukh
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Monday, March 3, 2014
5:06PM - 5:18PM
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D51.00012: Flexible metallic nanowires with self-adaptive contacts to semiconducting transition-metal dichalcogenide monolayers
Junhao Lin, Ovidiu Cretu, Wu Zhou, Kazu Suenaga, Dhiraj Prasai, Kirill Bolotin, Nguyen Cuong, Minoru Otani, Susumu Okada, Andrew Lupini, Juan Idrobo, Dave Caudel, Arnold Burger, Jiaqiang Yan, Nirmal Ghimire, David Mandrus, Stephen Pennycook, Sokrates Pantelides
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Monday, March 3, 2014
5:18PM - 5:30PM
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D51.00013: Interface effect on multilayer tungsten disulfide device caused by substrate and water molecule
Xue Liu, Yun Ling, Jin Hu, Chunlei Yue, Zhiqiang Mao, Jiang Wei
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