Bulletin of the American Physical Society
APS March Meeting 2014
Volume 59, Number 1
Monday–Friday, March 3–7, 2014; Denver, Colorado
Session C1: Poster Session I (14:00 - 17:00)
2:00 PM,
Monday, March 3, 2014
Room: Exhibit Hall F
Abstract ID: BAPS.2014.MAR.C1.136
Abstract: C1.00136 : Growth and Characterization of Homoepitaxial GaN on N-face GaN Free-standing~Substrate by Plasma-Assisted Molecular-Beam Epitaxy
Preview Abstract Abstract
Authors:
Cheng-Da Tsai
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R. O. C)
Ikai Lo
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R. O. C)
Wei-I Lee
(Electrophysics, National Chiao Tung University, 1001University Road, Hsinchu 30010,Taiwan,R. O.C.)
Chuo-Han Lee
(Electrophysics, National Chiao Tung University, 1001University Road, Hsinchu 30010,Taiwan,R. O.C.)
Ying-Chieh Wang
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R. O. C)
Chia-Hsuan Hu
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R. O. C)
Cheng-Hung Shih
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R. O. C)
Chen-Chi Yang
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R. O. C)
Yu-Chiao Lin
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R. O. C)
Shuo-Ting You
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R. O. C)
Collaboration:
Electrophysics, National Chiao Tung University, 1001University Road, Hsinchu 30010,Taiwan,R. O.C.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2014.MAR.C1.136
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