Magnetotransport measurements on Mn-doped Bi$_{2}$Se$_{3}$ Thin Films*

The intrinsic n type conductivity of bulk topological insulator Bi2Se3 was compensated with Mn dopant to increase the resistivity. In addition, the magnetic character of Mn ions causes a gap opening of the corresponding Dirac cone surface states. We investigated the effect of the Mn on crystal structure as well as the transport and magnetic properties of Bi2-xMnxSe3 thin films grown by molecular beam epitaxy on Al2O3 (0001) substrates. Characteristic features in the form of the Kondo effect and weak anti-localization were observed at different Mn concentrations up to temperatures of 50 K accompanied by enhanced resistance and reduced carrier mobility. The phase coherence length of the two-dimensional sheet conductance decreased with increasing Mn-concentration, however the protected surface states were still present up to x$=$0.063.