Variation of the electronic densities of states as a function of impurity concentration in amorphous bismuth alloys

The properties of materials are strongly related to their atomic topology, especially when we compare properties related to the ordered and disordered phases. Using Density Functional Theory methods on 64-atom supercells we obtain the structure and calculate the electronic density of states (eDOS) as a function of the concentration of lead, thallium or antimony in an amorphous bismuth supercell. This is done to investigate how the eDOS affects the superconducting transition temperature (T$_{c}$), taking into account the measurements made by Shier and Ginsberg\footnote{J. S. Shier and D. M. Ginsberg, Phys. Rev., vol. 384, p. 147, 1966} on contaminated amorphous bismuth thin films.