A stable path to ferromagnetic hydrogenated-graphene growth*

Based upon first principle calculations, we present results that indicate the presence of a preferential site on one sublattice for hydrogen adsorption due to the screening effect of hexagonal boron nitride (h-BN). Our results show the effect of h-BN increases the hydrogen migration barrier on top of graphene. We propose a functional heterostructure as a TMR device, which is exploiting the screening effect caused by h-BN and the insulating properties of this exotic 2-D material. The density of states (DOS) calculations, with 1, 2 and 3 h-BN layers sandwiched in between two layers of graphone, show a half metallic state for these new heterostructures.