Bulletin of the American Physical Society
APS March Meeting 2014
Volume 59, Number 1
Monday–Friday, March 3–7, 2014; Denver, Colorado
Session J45: Semiconductor Electronic Structure: Thermodynamic & Optical Properties
2:30 PM–5:30 PM,
Tuesday, March 4, 2014
Room: Mile High Ballroom 4D
Sponsoring
Unit:
FIAP
Abstract ID: BAPS.2014.MAR.J45.4
Abstract: J45.00004 : In situ tuning biexciton antibinding-binding transition and fine structure splitting through hydrostatic pressure in single InGaAs quantum dots
3:06 PM–3:18 PM
Preview Abstract
Abstract
Authors:
Hai Wei
(Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, PR China)
Xuefei Wu
(Institute of Semiconductors, CAS, Beijing, 100083, PR China)
Xiuming Dou
(Institute of Semiconductors, CAS, Beijing, 100083, PR China)
Kun Ding
(Institute of Semiconductors, CAS, Beijing, 100083, PR China)
Ying Yu
(Institute of Semiconductors, CAS, Beijing, 100083, PR China)
Haiqiao Ni
(Institute of Semiconductors, CAS, Beijing, 100083, PR China)
Zhichuan Niu
(Institute of Semiconductors, CAS, Beijing, 100083, PR China)
Yang Ji
(Institute of Semiconductors, CAS, Beijing, 100083, PR China)
Shushen Li
(Institute of Semiconductors, CAS, Beijing, 100083, PR China)
Desheng Jiang
(Institute of Semiconductors, CAS, Beijing, 100083, PR China)
Guang-can Guo
(Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, PR China)
Lixin He
(Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, PR China)
Baoquan Sun
(Institute of Semiconductors, CAS, Beijing, 100083, PR China)
Collaborations:
Institute of Semiconductors, CAS, PR China, Key Laboratory of Quantum Information, University of Science and Technology of China, PR China
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2014.MAR.J45.4
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