Cyclotron mass and g-factor of high mobility holes in SiGe/Ge/SiGe in tilted magnetic field*

Complex ac conductivity of a high quality single quantum well p-GeSi/Ge/GeSi (p=6$\cdot$10$^{11}$cm$^{-2}$) is measured using the surface acoustic wave technique at frequencies 30 and 85 MHz in magnetic fields of up to 18 T in the temperature range 0.3 - 5.8 K. In minima of the conductivity oscillations with small filling factors in integer quantum hall regime the ac conductivity is of the hopping nature and is described within the ``two-site'' model. In tilted fields for odd filling factors 3 and 5 increase of conductivity in the minima of the oscillations is due to effect of the in-plane field component on the g-factor. The same in-plane component causes rising of the cyclotron effective mass and damping of the oscillation magnitudes at even filling factors larger than 8.