Carrier and Spin Dynamics in InAsP Ternary Alloys*

The recent rapid progress in the field of spintronics involves extensive measurements of carrier and spin relaxation dynamics in III-V semiconductors. In addition, as the switching rates in electronic and optoelectronic devices are pushed to higher frequencies, it is important to understand carrier dynamic phenomena in semiconductors on femtosecond time-scales. In this work, we employed time and polarization-resolved differential transmission measurements in near and mid-infrared, to probe carrier and spin relaxation times in several InAsP ternary alloys. Our results demonstrate the unique and complex dynamics in this material system that can be important for electronic and optoelectronic devices. We present our experimental observations and compare them with the observations in InAs and InP.